https://flatland-pi.vercel.app/materials/bi2se3.html The newest items tagged Bi₂Se₃, Bi₂Te₃ in the Flatland news feed. en Mon, 05 Oct 2026 08:10:53 GMT https://arxiv.org/abs/2610.01722 https://arxiv.org/abs/2610.01722 Fri, 02 Oct 2026 04:00:00 GMT arXiv: Bismuth telluride (Bi2Te3) is a prototypical V-VI semiconductor of interest for both thermoelectric and topological applications; however, phase-selective synthesis and thermal stability across the bismuth-telluride homologous series remain poorly understood. We report a facile and phosphine-free colloidal synthesis… Theory Bi₂Se₃, Bi₂Te₃ https://onlinelibrary.wiley.com/doi/10.1002/smll.76036?af=R https://onlinelibrary.wiley.com/doi/10.1002/smll.76036?af=R Thu, 01 Oct 2026 07:24:36 GMT Small Experiment Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2609.39817 https://arxiv.org/abs/2609.39817 Thu, 01 Oct 2026 04:00:00 GMT arXiv: Floquet band engineering has been intensively studied for its potential to control material properties via laser driving. In particular, Floquet topological states have been measured on the surface of Bi₂Se₃. Nonetheless, the original prediction of Floquet topological bands in graphene remains unobserved, with works… Theory Experiment Graphene Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2609.30016v1 https://arxiv.org/abs/2609.30016v1 Thu, 24 Sep 2026 15:54:58 GMT arXiv: Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. As equivalent oxide thickness is reduced, however, finite interfacial responses can increasingly constrain gate control… Engineering Bi₂Se₃, Bi₂Te₃ MoS₂ http://link.aps.org/doi/10.1103/mm55-8939 http://link.aps.org/doi/10.1103/mm55-8939 Mon, 21 Sep 2026 10:00:00 GMT Physical Review Materials: Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here,… [Phys. Rev.… Experiment Antimonene, bismuthene Graphene Bi₂Se₃, Bi₂Te₃ http://link.aps.org/doi/10.1103/mgss-6bnl http://link.aps.org/doi/10.1103/mgss-6bnl Mon, 21 Sep 2026 10:00:00 GMT Physical Review B: The paucity of naturally occurring noncentrosymmetric materials is stimulating growing interest in engineered two-dimensional systems for nonlinear optical applications. Here, we show that breaking inversion symmetry in centrosymmetric bilayer Bi₂Se₃ through twisting, p… [Phys. Rev. B 114, 175129] Published Mon Sep 21… Theory Bi₂Se₃, Bi₂Te₃ http://link.aps.org/doi/10.1103/5xrk-zq8m http://link.aps.org/doi/10.1103/5xrk-zq8m Thu, 10 Sep 2026 10:00:00 GMT Physical Review B: Conventional wisdom dictates that the conducting edge states of two-dimensional topological insulators of the Bi₂Se₃ family are protected by time-reversal symmetry. However, theoretical bulk calculations and a recent experiment show that the edge states persist in the p… [Phys. Rev. B 114, 175405] Published Thu Sep 10… Theory Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2609.08498v1 https://arxiv.org/abs/2609.08498v1 Tue, 08 Sep 2026 09:39:12 GMT arXiv: The control and perturbation of quantum phenomena with magnetic fields is an indispensable tool in materials research. Recently, in-situ field tuning was implemented into angle-resolved photoemission spectroscopy (magneto-ARPES), which provides direct momentum and energy-resolved information of the field-dependent… Experiment Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2609.08498v1 https://arxiv.org/abs/2609.08498v1 Tue, 08 Sep 2026 09:39:12 GMT arXiv: The control and perturbation of quantum phenomena with magnetic fields is an indispensable tool in materials research. Recently, in-situ field tuning was implemented into angle-resolved photoemission spectroscopy (magneto-ARPES), which provides direct momentum and energy-resolved information of the field-dependent… Experiment Bi₂Se₃, Bi₂Te₃ https://iopscience.iop.org/article/10.1088/2053-1583/ae9aab https://iopscience.iop.org/article/10.1088/2053-1583/ae9aab Thu, 27 Aug 2026 23:00:00 GMT 2D Materials (IOP): We report the emergence of a weak topological insulator (TI) phase in the thin films of the R3m phase of , observed from electrical transport measurements. Conventional is a strong TI. In contrast, the R3m phase breaks inversion symmetry, thereby inducing anisotropic spin–orbit coupling. We conducted electrical… Experiment Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2607.26311v2 https://arxiv.org/abs/2607.26311v2 Tue, 28 Jul 2026 22:14:45 GMT arXiv: Bulk-Rashba spin splitting is forbidden in tetradymite topological insulators like Bi₂Se₃ or Bi₂Te₃, since their quintuple-layer stacking preserves inversion symmetry. We show that BiSbTeSe₂ escapes this restriction: in the Se-Bi-Se-Sb-Te sequence, the structure loses its inversion center, reducing the point group… Theory Bi₂Se₃, Bi₂Te₃ BiTeX https://arxiv.org/abs/2606.20541v1 https://arxiv.org/abs/2606.20541v1 Thu, 18 Jun 2026 17:52:02 GMT arXiv: The tunability and control of topological edge/surface states are crucial for the development of new device applications. In this work, by combining first-principles calculations and Wannier-based tight-binding methods, we show the emergence of quantum spin Hall phases in van der Waals heterostructures formed by… Theory Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2603.14199v1 https://arxiv.org/abs/2603.14199v1 Sun, 15 Mar 2026 03:17:19 GMT arXiv: Quantum spin Hall insulators, or synonymously known as 2D topological insulators, are crucial 2D systems hosting topologically protected edge states. The working temperature of this topological quantum phase is dictated by the inverted bandgap. However, the previously identified large-gap 2D topological insulators are… Experiment Theory MnBi₂Te₄ Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2602.11932v1 https://arxiv.org/abs/2602.11932v1 Thu, 12 Feb 2026 13:28:47 GMT arXiv: The integration of topological insulators (TIs) with graphene offers a pathway to engineer hybrid quantum states, yet the impact of strain at the 2D limit remains a critical open question. Here, we investigate the structural properties of ultrathin (1 quintuple layer) Sb₂Te₃ grown on single-layer graphene and… Theory Experiment Graphene Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2601.11353v1 https://arxiv.org/abs/2601.11353v1 Fri, 16 Jan 2026 15:01:56 GMT arXiv: Mn-Sb site mixing directly impacts both the magnetic and topological properties of MnSb2Te4. This study reveals, unlike previously believed, that these anti-sites can be unevenly distributed within the crystal. To that end, a polycrystalline sample was created with a two-step synthesis using MnTe and Sb2Te3 as… Experiment MnBi₂Te₄ Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2509.00090v2 https://arxiv.org/abs/2509.00090v2 Wed, 27 Aug 2025 13:24:41 GMT arXiv: Machine-learned force fields (MLFFs), especially pre-trained foundation models, are transforming computational materials science by enabling ab initio-level accuracy at molecular dynamics scales. Yet their rapid rise raises a key question: should researchers train specialist models from scratch, fine-tune generalist… Theory Bi₂Se₃, Bi₂Te₃ https://arxiv.org/abs/2504.16698v1 https://arxiv.org/abs/2504.16698v1 Wed, 23 Apr 2025 13:28:58 GMT arXiv: In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were… Theory Experiment SnSe, GeSe TaIrTe₄, ZrTe₅, HfTe₅ Bi₂Se₃, Bi₂Te₃