https://flatland-pi.vercel.app/materials/group-iv-monochalcogenide.html The newest items tagged SnSe, GeSe in the Flatland news feed. en Mon, 05 Oct 2026 08:10:53 GMT https://iopscience.iop.org/article/10.1088/1361-6528/aea85a https://iopscience.iop.org/article/10.1088/1361-6528/aea85a Tue, 29 Sep 2026 23:00:00 GMT Nanotechnology (IOP): This work demonstrates that mechanical exfoliation induces measurable distortions in the van der Waals (vdW) gap of layered crystals, while the annealing process can reduce this distortion. Using x-ray diffraction, lattice parameters were compared in bulk and mechanically exfoliated flakes of selected transition metal… Theory Experiment SnSe, GeSe TiSe₂, ZrSe₂, HfSe₂ https://arxiv.org/abs/2609.20019v1 https://arxiv.org/abs/2609.20019v1 Thu, 17 Sep 2026 10:25:56 GMT arXiv: Monolayer tin selenide (SnSe) exhibits phase-dependent anharmonic lattice dynamics, yet their consequences for the thermoelectric power factor (PF) and point-defect tolerance remain unresolved. We combine density functional theory, the stochastic self-consistent harmonic approximation (SSCHA), and Boltzmann transport… Theory SnSe, GeSe https://arxiv.org/abs/2604.10067v2 https://arxiv.org/abs/2604.10067v2 Sat, 11 Apr 2026 07:08:58 GMT arXiv: Two-dimensional (2D) SnSe is an emerging 2D material exhibiting intriguing properties such as ferroelectricity and nonlinear optical response. Here, high-quality single-crystalline SnSe nanosheets were synthesized via NaCl-assisted chemical vapor deposition (CVD) method. The addition of NaCl was found to significantly… Experiment SnSe, GeSe SnS₂, SnSe₂ https://arxiv.org/abs/2603.06446v2 https://arxiv.org/abs/2603.06446v2 Fri, 06 Mar 2026 16:38:52 GMT arXiv: The optical response of two-dimensional materials is often significantly impacted by excitonic effects due to the reduced screening of attractive Coulomb interactions in low-dimensional systems. Accurate modeling of exciton formation and real-time dynamics is essential to understanding their ultrafast optical… Theory SnSe, GeSe hBN https://arxiv.org/abs/2510.10521v3 https://arxiv.org/abs/2510.10521v3 Sun, 12 Oct 2025 09:44:19 GMT arXiv: Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge… Engineering Theory SnSe, GeSe In₂Se₃ https://arxiv.org/abs/2504.16698v1 https://arxiv.org/abs/2504.16698v1 Wed, 23 Apr 2025 13:28:58 GMT arXiv: In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were… Theory Experiment SnSe, GeSe TaIrTe₄, ZrTe₅, HfTe₅ Bi₂Se₃, Bi₂Te₃