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    <title>Flatland: news on TiSe₂, ZrSe₂, HfSe₂</title>
    <link>https://flatland-pi.vercel.app/materials/group4-tmdc.html</link>
    <description>The newest items tagged TiSe₂, ZrSe₂, HfSe₂ in the Flatland news feed.</description>
    <language>en</language>
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    <lastBuildDate>Mon, 05 Oct 2026 08:10:53 GMT</lastBuildDate>
    <item>
      <title>Exfoliation-induced increase in van der Waals gap in two-dimensional layered crystals</title>
      <link>https://iopscience.iop.org/article/10.1088/1361-6528/aea85a</link>
      <guid isPermaLink="true">https://iopscience.iop.org/article/10.1088/1361-6528/aea85a</guid>
      <pubDate>Tue, 29 Sep 2026 23:00:00 GMT</pubDate>
      <description>Nanotechnology (IOP): This work demonstrates that mechanical exfoliation induces measurable distortions in the van der Waals (vdW) gap of layered crystals, while the annealing process can reduce this distortion. Using x-ray diffraction, lattice parameters were compared in bulk and mechanically exfoliated flakes of selected transition metal…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>SnSe, GeSe</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure</title>
      <link>https://arxiv.org/abs/2609.11992v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2609.11992v1</guid>
      <pubDate>Wed, 09 Sep 2026 20:05:43 GMT</pubDate>
      <description>arXiv: In this study, we examine the surface sensitivity of a transition metal dichalcogenide (TiTe2) grown using the Chemical Vapor Transport (CVT) technique at high pressure and study the surface changes in the sample upon exposure to air as well as its crystallographic properties upon e-beam exposure. We examine the local…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Interplay of Excitonic Charge Density Wave and Superconductivity in Transition Metal Dichalcogenides</title>
      <link>https://arxiv.org/abs/2608.29822v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2608.29822v1</guid>
      <pubDate>Sun, 30 Aug 2026 14:47:05 GMT</pubDate>
      <description>arXiv: Motivated by the unique characteristics of the phase diagram of 1T-TiSe2, we investigated the complex interplay of excitonic charge density wave (CDW) and superconductivity (SC) on a two-dimensional triangular lattice, each site accommodating two orbitals. In response to various tuning parameters, such as…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Direct Evidence for Robust Bulk Band Gap Across the Charge Density Wave Transition in TiSe2</title>
      <link>https://arxiv.org/abs/2608.05059v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2608.05059v1</guid>
      <pubDate>Wed, 05 Aug 2026 17:06:37 GMT</pubDate>
      <description>arXiv: The mechanism driving the charge density wave (CDW) transition in TiSe2 has been debated for decades, with proposals ranging from an excitonic insulator to a lattice-driven instability. A central question remains whether the transition involves an opening or enhancement of the bulk band gap. Using high-resolution…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Observation of intertwined charge density wave order and superconductivity in Janus monolayer</title>
      <link>https://arxiv.org/abs/2606.13828v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2606.13828v1</guid>
      <pubDate>Thu, 11 Jun 2026 18:59:40 GMT</pubDate>
      <description>arXiv: Low-dimensional transition-metal dichalcogenides (TMDCs) provide an ideal platform for studying the emergence of charge density wave (CDW) and superconductivity. The discovery of emergent CDW order in 1T ZrTe₂ monolayer raises an important question: does this instability persist when one Te chalcogen layer is…</description>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
      <category>Janus MoSSe</category>
    </item>
    <item>
      <title>Curvature-driven revival of charge density waves in non-Euclidean space</title>
      <link>https://arxiv.org/abs/2606.04728v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2606.04728v1</guid>
      <pubDate>Wed, 03 Jun 2026 11:13:02 GMT</pubDate>
      <description>arXiv: Strongly correlated quantum states, such as charge density waves (CDWs), are exquisitely sensitive to Fermi surface topology and lattice symmetry, and are typically quenched by heavy carrier doping. In two-dimensional (2D) systems, however, macroscopic geometric curvature emerges as a novel structural degree of freedom…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
      <category>NbSe₂, NbS₂, NbTe₂</category>
    </item>
    <item>
      <title>Emergent surface resonance from charge density wave symmetry breaking in TiSe2</title>
      <link>https://arxiv.org/abs/2604.26685v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2604.26685v1</guid>
      <pubDate>Wed, 29 Apr 2026 13:51:21 GMT</pubDate>
      <description>arXiv: Surface confined electronic states provide a fertile ground for discovering emergent phenomena that have no counterpart in the bulk, offering new routes to manipulate correlations, symmetry breaking, and dimensionality at the atomic scale. Here, we show that charge density wave (CDW) symmetry breaking can yield a…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Cold source field-effect transistor with type-III band-aligned HfS₂/WTe₂ heterostructure</title>
      <link>https://arxiv.org/abs/2603.11819v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2603.11819v1</guid>
      <pubDate>Thu, 12 Mar 2026 11:27:28 GMT</pubDate>
      <description>arXiv: The cold source field-effect transistor (CSFET) is promising for reducing power dissipation in integrated circuits by engineering the density of states at the injecting source. Existing CSFET designs utilizing Dirac-source metals or p-Metal-n stacks are challenged by Schottky barriers at the metal-semiconductor…</description>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
      <category>WTe₂</category>
    </item>
    <item>
      <title>On the origin of diverse interlayer charge redistribution in transition-metal dichalcogenides</title>
      <link>https://arxiv.org/abs/2603.09603v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2603.09603v1</guid>
      <pubDate>Tue, 10 Mar 2026 12:47:31 GMT</pubDate>
      <description>arXiv: The interlayer quasi-chemical-bonding (QCB) interactions of two-dimensional (2D) layered materials promote the research field of interlayer-engineering and cause interlayer charge density redistributions (ICDRs). The ICDRs have been reported experimentally and theoretically, which show different redistributions, e.g.…</description>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
      <category>NbSe₂, NbS₂, NbTe₂</category>
      <category>MoS₂</category>
    </item>
    <item>
      <title>Plasmonic polaron in self-intercalated 1T-TiS2</title>
      <link>https://arxiv.org/abs/2603.03663v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2603.03663v1</guid>
      <pubDate>Wed, 04 Mar 2026 02:35:29 GMT</pubDate>
      <description>arXiv: Electron-boson coupling is central to a comprehensive understanding of the diverse physical phenomena emerging from many-body interactions. Yet less attention has been paid to how plasmons, collective bosonic modes of electron density oscillation, interact with conduction electrons and how external parameters can tune…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Electronic band structure reconstruction in NiₓZrTe₂</title>
      <link>https://arxiv.org/abs/2601.02647v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2601.02647v1</guid>
      <pubDate>Tue, 06 Jan 2026 01:48:40 GMT</pubDate>
      <description>arXiv: The filling of the large van der Waals gap in Transition Metal Dichalcogenides (TMDs) often leads to lattice and electronic instabilities, which prelude the onset of a rich phenomenology. Here, we investigate the electronic structure of the TMDs ZrTe₂ and Ni-intercalated ZrTe₂ (NiₓZrTe₂, x≈0.05) employing…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Nematic-fluctuation-mediated superconductivity in CuxTiSe2</title>
      <link>https://arxiv.org/abs/2601.00723v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2601.00723v1</guid>
      <pubDate>Fri, 02 Jan 2026 15:37:12 GMT</pubDate>
      <description>arXiv: The interplay among electronic nematicity, charge density wave, and superconductivity in correlated electronic systems has induced extensive research interest. Here, we discover the existence of nematic fluctuations in TiSe2 single crystal and investigate its evolution with Cu intercalation. It is observed that the…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Intercalation induced quasi-freestanding layer in TiSe₂</title>
      <link>https://arxiv.org/abs/2511.03712v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2511.03712v1</guid>
      <pubDate>Wed, 05 Nov 2025 18:43:37 GMT</pubDate>
      <description>arXiv: Angle-resolved photoemission spectroscopy is employed to study the electronic structure of bulk TiSe2 before and after doping with potassium impurities. A splitting in the conduction band into two branches is observed after room-temperature deposition. The splitting energy increases to approximately 130 meV when the…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Electron-phonon-dominated charge-density-wave fluctuations in TiSe₂ accessed by ultrafast nonequilibrium dynamics</title>
      <link>https://arxiv.org/abs/2507.12430v3</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2507.12430v3</guid>
      <pubDate>Wed, 16 Jul 2025 17:18:31 GMT</pubDate>
      <description>arXiv: The complex phase diagram of 1T-TiSe2 consists of a charge density wave (CDW) below 200 K, and CDW fluctuations of still unknown origin at higher temperatures. Here, we use time-resolved extreme ultraviolet momentum microscopy and density functional perturbation theory to uncover the formation mechanism of CDW…</description>
      <category>Experiment</category>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>First-Principles Insights into Excitonic and Electron-Phonon Effects in van der Waals Heterostructures</title>
      <link>https://arxiv.org/abs/2506.23570v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2506.23570v1</guid>
      <pubDate>Mon, 30 Jun 2025 07:24:55 GMT</pubDate>
      <description>arXiv: Motivated by the successful synthesis of isolated ZrS2 and HfS2 transition metal dichalcogenide (TMD) monolayers and inspired by their nearly identical lattice constants, we construct and investigate a vertical ZrS2/HfS2 van der Waals (vdW) heterostructure. Using first-principles calculations based on density…</description>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Zero-energy band observation in an interfacial chalcogen-organic network</title>
      <link>https://arxiv.org/abs/2506.10555v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2506.10555v1</guid>
      <pubDate>Thu, 12 Jun 2025 10:27:06 GMT</pubDate>
      <description>arXiv: Structurally-defined molecule-based lattices such as covalent organic or metal-organic networks on substrates, have emerged as highly tunable, modular platforms for two-dimensional band structure engineering. The ability to grow molecule-based lattices on diverse platforms, such as metal dichalcogenides, would further…</description>
      <category>Experiment</category>
      <category>Theory</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
    </item>
    <item>
      <title>Observation of resistive switching and diode effect in the conductivity of TiTe2 point contacts</title>
      <link>https://arxiv.org/abs/2505.22328v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2505.22328v1</guid>
      <pubDate>Wed, 28 May 2025 13:15:00 GMT</pubDate>
      <description>arXiv: We measured the I(V) and dV/dI(V) characteristics of TiTe2-based point contacts (PCs) from room to helium temperatures. Features indicating the emergence of a charge density wave (CDW) were detected. They represent symmetrical relatively V=0 maxima in dV/dI(V) around 150 mV at liquid helium temperatures, which…</description>
      <category>Experiment</category>
      <category>TiSe₂, ZrSe₂, HfSe₂</category>
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