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    <title>Flatland: news on In₂Se₃</title>
    <link>https://flatland-pi.vercel.app/materials/in2se3.html</link>
    <description>The newest items tagged In₂Se₃ in the Flatland news feed.</description>
    <language>en</language>
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    <lastBuildDate>Mon, 05 Oct 2026 08:10:53 GMT</lastBuildDate>
    <item>
      <title>Topological Hall Effect Induced by Chiral Spin Textures at the Ferroelectric/Ferromagnetic Interface</title>
      <link>https://arxiv.org/abs/2609.37406</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2609.37406</guid>
      <pubDate>Wed, 30 Sep 2026 04:00:00 GMT</pubDate>
      <description>arXiv: Chiral spin textures, largely driven by the Dzyaloshinskii-Moriya interaction, offer significant potential for next-generation computing technologies due to their chirality and topological stability. Ferroelectric/ferromagnetic van der Waals heterostructures are particularly appealing because they can combine…</description>
      <category>Theory</category>
      <category>Fe₃GeTe₂, Fe₃GaTe₂</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Fractional-Quantum Ferroelectrics: A Route to High-Mobility Ferroelectric Semiconductors</title>
      <link>https://arxiv.org/abs/2609.16799</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2609.16799</guid>
      <pubDate>Wed, 16 Sep 2026 04:00:00 GMT</pubDate>
      <description>arXiv: Ferroelectric semiconductors are promising for multifunctional electronics, yet their typically low carrier mobilities remain a major limitation. Using first-principles phonon-limited transport calculations for monolayer In₂Se₃, we show that this limitation depends critically on the microscopic origin of…</description>
      <category>Theory</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation</title>
      <link>https://arxiv.org/abs/2609.11203v2</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2609.11203v2</guid>
      <pubDate>Thu, 10 Sep 2026 08:11:32 GMT</pubDate>
      <description>arXiv: A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrPS4. Temperature-dependent Raman spectroscopy reveals spin-phonon coupling persisting up to T*~120K, concomitant with local lattice…</description>
      <category>Experiment</category>
      <category>Theory</category>
      <category>In₂Se₃</category>
      <category>CrPS₄</category>
    </item>
    <item>
      <title>Fully compensated ferrimagnetic triferroics and multistate transport in hidden-phase wurtzite MnSe monolayer</title>
      <link>https://arxiv.org/abs/2606.31419v1</link>
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      <pubDate>Tue, 30 Jun 2026 09:43:10 GMT</pubDate>
      <description>arXiv: Fully compensated ferrimagnets (fFIMs) have attracted interest due to their compensated moments and nonrelativistic spin splitting across the Brillouin zone. Known fFIMs, however, are mostly restricted to complex three-dimensional (3D) systems or require external fields in two-dimensional (2D) heterostructures, leaving…</description>
      <category>Experiment</category>
      <category>Theory</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Symmetry-Enforced Ferroelectric Switching of Two-Dimensional Altermagnetism</title>
      <link>https://arxiv.org/abs/2606.31241v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2606.31241v1</guid>
      <pubDate>Tue, 30 Jun 2026 07:16:42 GMT</pubDate>
      <description>arXiv: Altermagnetism features strong momentum-dependent spin splitting despite zero net magnetization, offering a transformative platform for next-generation spintronics. However, the nonvolatile and deterministic switching between its two equivalent spin-splitting states remains a fundamental bottleneck. Here, we propose a…</description>
      <category>Theory</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Molecular Beam Epitaxy of Mn2In2Se5 van der Waals Layers Using Mn Intercalation</title>
      <link>https://arxiv.org/abs/2606.13906v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2606.13906v1</guid>
      <pubDate>Thu, 11 Jun 2026 20:53:17 GMT</pubDate>
      <description>arXiv: The weak van der Waals (vdW) force in layered chalcogenide materials has enabled the growth of ternary chalcogenide layers using unconventional approaches. Here, we report the molecular beam epitaxy (MBE) growth of Mn2In2Se5, a spin glass material with high level of magnetic frustration, through the heterointegration…</description>
      <category>Experiment</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Many-body description of two-dimensional van der Waals ferroelectric α-In₂Se₃</title>
      <link>https://arxiv.org/abs/2604.05220v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2604.05220v1</guid>
      <pubDate>Mon, 06 Apr 2026 22:33:38 GMT</pubDate>
      <description>arXiv: Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other materials to control electronic phase transitions and topological states. While these materials are typically weakly correlated and expected to…</description>
      <category>Theory</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>2D ferroelectric narrow-bandgap semiconductor Wurtzite' type alpha-In2Se3 and its silicon-compatible growth</title>
      <link>https://arxiv.org/abs/2602.08381v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2602.08381v1</guid>
      <pubDate>Mon, 09 Feb 2026 08:32:07 GMT</pubDate>
      <description>arXiv: 2D van der Waals ferroelectrics, particularly alpha-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. alpha-In2Se3 can adopt either the distorted zincblende or wurtzite…</description>
      <category>Experiment</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Electrical control of spin currents in graphene via ferroelectric switching achieved</title>
      <link>https://phys.org/news/2025-11-electrical-currents-graphene-ferroelectric.html</link>
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      <pubDate>Fri, 14 Nov 2025 18:50:05 GMT</pubDate>
      <description>Phys.org: A collaborative European research team led by physicists from Slovak Academy of Sciences has theorized a new approach to control spin currents in graphene by coupling it to a ferroelectric In2Se3 monolayer. Using first-principles and tight-binding simulations, the researcher showed that the ferroelectric switching of…</description>
      <category>Everyone</category>
      <category>Theory</category>
      <category>Graphene</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions</title>
      <link>https://arxiv.org/abs/2510.10521v3</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2510.10521v3</guid>
      <pubDate>Sun, 12 Oct 2025 09:44:19 GMT</pubDate>
      <description>arXiv: Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge…</description>
      <category>Engineering</category>
      <category>Theory</category>
      <category>SnSe, GeSe</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Work Function Mapping Across a-In2Se3 to α-In2Se3 to γ-InSe in RF-Sputtered Thin Films</title>
      <link>https://arxiv.org/abs/2510.08767v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2510.08767v1</guid>
      <pubDate>Thu, 09 Oct 2025 19:35:12 GMT</pubDate>
      <description>arXiv: Indium selenide is a phase-change chalcogenide whose polymorphism enables a variety of physical properties to be tuned. Here we directly quantify the evolution of the surface work function across the amorphous-to-crystalline transition in RF-sputtered In2Se3 thin films grown on c-plane Al2O3 (001). By varying…</description>
      <category>Experiment</category>
      <category>Engineering</category>
      <category>In₂Se₃</category>
      <category>InSe, GaSe</category>
    </item>
    <item>
      <title>Quantum Size Effect in Optically Active Indium Selenide Crystal Phase Heterostructures Grown by Molecular Beam Epitaxy</title>
      <link>https://arxiv.org/abs/2509.06605v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2509.06605v1</guid>
      <pubDate>Mon, 08 Sep 2025 12:20:28 GMT</pubDate>
      <description>arXiv: Indium selenide attracts the interest due to its outstanding electronic and optical properties which are potentially prospective in view of applications in electronic and photonic devices. Most of the polymorphic crystal phases of this semiconductor belong to the family of two-dimensional van der Waals semiconductors.…</description>
      <category>Experiment</category>
      <category>Engineering</category>
      <category>In₂Se₃</category>
      <category>InSe, GaSe</category>
    </item>
    <item>
      <title>Phase-engineered Non-degenerate Sliding Ferroelectricity Enables Tunable Photovoltaics in Monolayer Janus In2S2Se</title>
      <link>https://arxiv.org/abs/2507.22722v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2507.22722v1</guid>
      <pubDate>Wed, 30 Jul 2025 14:40:41 GMT</pubDate>
      <description>arXiv: Two-dimensional sliding ferroelectrics, with their enhanced efficiencies of charge separation and tunability, constitute promising platforms for next-generation photovoltaic devices. However, recent systems predominantly exhibit dual degenerate polarization states with weak intensity, hindering the optimal…</description>
      <category>Theory</category>
      <category>In₂Se₃</category>
    </item>
    <item>
      <title>Phase stabilization of In2Se3 by disordered Ni intercalation and its enhanced thermoelectrical performance</title>
      <link>https://arxiv.org/abs/2504.16605v1</link>
      <guid isPermaLink="true">https://arxiv.org/abs/2504.16605v1</guid>
      <pubDate>Wed, 23 Apr 2025 10:34:23 GMT</pubDate>
      <description>arXiv: Van der Waals (vdW) layered materials have gained significant attention owing to their distinctive structure and unique properties. The weak interlayer bonding in vdW layered materials enables guest atom intercalation, allowing precise tuning of their physical and chemical properties. In this work, a ternary compound…</description>
      <category>Theory</category>
      <category>In₂Se₃</category>
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