https://flatland-pi.vercel.app/materials/inse.html The newest items tagged InSe, GaSe in the Flatland news feed. en Mon, 05 Oct 2026 08:10:53 GMT http://link.aps.org/doi/10.1103/skwd-9vcl http://link.aps.org/doi/10.1103/skwd-9vcl Wed, 30 Sep 2026 10:00:00 GMT Physical Review B: The realization of half-metallicity in two-dimensional materials is of considerable interest for the development of nanoscale spintronic devices. In this work, we systematically investigate the electronic structure and spin-dependent quantum transport properties of substitutionally Mo-doped GaSe mon… [Phys. Rev. B 114… Theory InSe, GaSe http://link.aps.org/doi/10.1103/8hv7-ls9p http://link.aps.org/doi/10.1103/8hv7-ls9p Mon, 21 Sep 2026 10:00:00 GMT Physical Review B: Resonance Raman spectroscopy is a powerful tool for probing electron–phonon coupling, phonon momentum distributions, and stacking-related spectral features in InSe. Based on first-principles calculations, we systematically investigate the single-resonance Raman (SRR) and double-resonance Raman (DRR)… [Phys. Rev. B 114… Theory Experiment InSe, GaSe http://link.aps.org/doi/10.1103/8w6z-vwvm http://link.aps.org/doi/10.1103/8w6z-vwvm Wed, 16 Sep 2026 10:00:00 GMT Physical Review Applied: Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy techniques to two-dimensional (2D) vdW GaSe doped with silicon (… [Phys. Rev.… Experiment InSe, GaSe http://link.aps.org/doi/10.1103/26rq-4m96 http://link.aps.org/doi/10.1103/26rq-4m96 Thu, 03 Sep 2026 10:00:00 GMT Physical Review B: Stacking order and layer thickness exert significant influence on the physical properties of two-dimensional materials. Here, using first-principles calculations and symmetry analysis, we theoretically investigate the stacking- and layer-dependent Raman responses of InSe and infer the corresponding … [Phys. Rev. B 114… Theory InSe, GaSe https://www.nature.com/articles/s41699-026-00727-9 https://www.nature.com/articles/s41699-026-00727-9 Thu, 03 Sep 2026 00:00:00 GMT npj 2D Materials and Applications: Interlayer charge-transfer states in SnS₂/InSe Van der Waals heterostructures realizing mid-infrared photodetection Theory InSe, GaSe SnS₂, SnSe₂ https://iopscience.iop.org/article/10.1088/2053-1583/ae97f3 https://iopscience.iop.org/article/10.1088/2053-1583/ae97f3 Mon, 31 Aug 2026 23:00:00 GMT 2D Materials (IOP): As the semiconductor industry faces growing demand for high-performance (HP) nanoscale devices, two-dimensional (2D) materials have emerged as promising candidates to challenge the long-standing dominance of silicon. Among them, 2D GaSe has recently attracted significant interest as a group-III monochalcogenide with a… Theory InSe, GaSe http://link.aps.org/doi/10.1103/gvzv-4fqy http://link.aps.org/doi/10.1103/gvzv-4fqy Wed, 19 Aug 2026 10:00:00 GMT Physical Review Materials: We report investigations into a new kind of multiferroic heterostructure consisting of a two-dimensional ferromagnetic 1T-phase FeCl₂ monolayer and a sliding-ferroelectric bilayer-GaSe using first principles calculations. In this study, we determine the structural and electronic prop… [Phys. Rev. Materials 10, 074420]… Theory InSe, GaSe NiI₂, FeCl₂, CoCl₂ https://arxiv.org/abs/2605.23418v1 https://arxiv.org/abs/2605.23418v1 Fri, 22 May 2026 09:28:08 GMT arXiv: Wafer-scale growth of two-dimensional semiconductors remains a key challenge for their integration into photonic technologies. While most studies of two-dimensional semiconductors have focused on transition metal dichalcogenides and their scalable fabrication, comparatively little attention has been given to III-VI… Experiment Engineering InSe, GaSe https://arxiv.org/abs/2605.20375v1 https://arxiv.org/abs/2605.20375v1 Tue, 19 May 2026 18:25:19 GMT arXiv: Driven by the growing demand for miniaturized spectrometers for in-situ analysis, and point-of-care diagnostics, conventional spectrometers are often constrained by bulky architectures and pathlength-limited spectral resolution. Achieving high-resolution, single-pixel computational spectrometers is therefore critical… Experiment Engineering InSe, GaSe https://arxiv.org/abs/2603.06845v1 https://arxiv.org/abs/2603.06845v1 Fri, 06 Mar 2026 20:10:32 GMT arXiv: The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der Waals surfaces, and ability to alloy and synthesize heterostructures for bandgap… Experiment InSe, GaSe https://arxiv.org/abs/2602.12899v2 https://arxiv.org/abs/2602.12899v2 Fri, 13 Feb 2026 13:00:35 GMT arXiv: Previous studies of the growth of two-dimensional (2D) gallium selenide (GaSe) by molecular beam epitaxy (MBE) on a gallium arsenide (GaAs) three-dimensional (3D) substrate have reported significant differences in growth morphology, polytype, and the nature of the interface. The results differ, ranging from GaSe 2D… Experiment Engineering InSe, GaSe https://arxiv.org/abs/2510.10743v1 https://arxiv.org/abs/2510.10743v1 Sun, 12 Oct 2025 18:29:39 GMT arXiv: The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire… Experiment InSe, GaSe https://arxiv.org/abs/2510.08767v1 https://arxiv.org/abs/2510.08767v1 Thu, 09 Oct 2025 19:35:12 GMT arXiv: Indium selenide is a phase-change chalcogenide whose polymorphism enables a variety of physical properties to be tuned. Here we directly quantify the evolution of the surface work function across the amorphous-to-crystalline transition in RF-sputtered In2Se3 thin films grown on c-plane Al2O3 (001). By varying… Experiment Engineering In₂Se₃ InSe, GaSe https://arxiv.org/abs/2509.21082v1 https://arxiv.org/abs/2509.21082v1 Thu, 25 Sep 2025 12:34:28 GMT arXiv: Two-dimensional (2D) indium selenide (InSe) is a layered semiconductor with high electron mobility and a tunable band gap ranging from 1.25 eV in the bulk to 2.8 eV in the monolayer limit. These properties make these materials strong candidates for future logic and optoelectronic devices. However, growing phase-pure… Experiment InSe, GaSe https://arxiv.org/abs/2509.06605v1 https://arxiv.org/abs/2509.06605v1 Mon, 08 Sep 2025 12:20:28 GMT arXiv: Indium selenide attracts the interest due to its outstanding electronic and optical properties which are potentially prospective in view of applications in electronic and photonic devices. Most of the polymorphic crystal phases of this semiconductor belong to the family of two-dimensional van der Waals semiconductors.… Experiment Engineering In₂Se₃ InSe, GaSe https://arxiv.org/abs/2508.16758v1 https://arxiv.org/abs/2508.16758v1 Fri, 22 Aug 2025 19:32:59 GMT arXiv: The impact of femtosecond (fs) laser radiation on semiconductors with direct (ZnSe, GaAs, CdZnTe) band gap, with the structurally induced direct-to-indirect band gap transition (PbI2, GaSe) and indirect band gap (Si) has been studied. The fs-laser treatment of semiconductors has been performed in the multi-pulse regime… Experiment Engineering InSe, GaSe PbI₂, BiI₃ https://arxiv.org/abs/2506.08212v1 https://arxiv.org/abs/2506.08212v1 Mon, 09 Jun 2025 20:31:23 GMT arXiv: Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In₂SeTe and In₂SSe, pristine InSe, and InSe under 4% and 6% tensile strain. In this work, the potential of these materials for… Engineering Janus MoSSe InSe, GaSe