https://flatland-pi.vercel.app/materials/mos2.html The newest items tagged MoS₂ in the Flatland news feed. en Mon, 05 Oct 2026 08:10:53 GMT https://doi.org/10.1021/acs.nanolett.6c03873 https://doi.org/10.1021/acs.nanolett.6c03873 Mon, 05 Oct 2026 06:02:33 GMT Nano Letters: Optoelectronic synaptic devices, particularly those based on two-dimensional (2D) transition metal dichalcogenides (TMDs), emulate biological synaptic functions, promising in neuromorphic computing. However, most TMD-based synapses rely on external gate or bias control, leading to complicated device architecture and… Experiment MoS₂ https://doi.org/10.1021/acsami.6c15768 https://doi.org/10.1021/acsami.6c15768 Fri, 02 Oct 2026 09:01:33 GMT ACS Applied Materials & Interfaces: Contact resistance remains a primary bottleneck in two-dimensional (2D) semiconductor field-effect transistors (FETs), yet the concurrent influence of metal work function, adhesion, and deposition temperature obscures the underlying mechanisms. Here, using bilayer MoS2 as a model system, we systematically benchmark… Experiment Engineering MoS₂ https://arxiv.org/abs/2610.00987v1 https://arxiv.org/abs/2610.00987v1 Thu, 01 Oct 2026 03:22:27 GMT arXiv: One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD)… Experiment Oxide nanosheets MoS₂ WS₂ https://arxiv.org/abs/2609.39417v2 https://arxiv.org/abs/2609.39417v2 Wed, 30 Sep 2026 09:56:53 GMT arXiv: Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape… Theory Experiment MoS₂ https://arxiv.org/abs/2609.39417v1 https://arxiv.org/abs/2609.39417v1 Wed, 30 Sep 2026 09:56:53 GMT arXiv: Moiré superlattices formed in transition metal dichalcogenides (TMDs) offer a versatile platform for exploring emergent quantum phases arising from strong electronic correlations. In this work, we develop a new experimental platform, the quantum well resonant tunneling diode (QWRTD), to probe the electronic landscape… Theory MoS₂ https://www.science.org/doi/abs/10.1126/sciadv.aei3860?af=R https://www.science.org/doi/abs/10.1126/sciadv.aei3860?af=R Wed, 30 Sep 2026 07:00:00 GMT Science Advances Theory MoS₂ https://onlinelibrary.wiley.com/doi/10.1002/smll.75923?af=R https://onlinelibrary.wiley.com/doi/10.1002/smll.75923?af=R Wed, 30 Sep 2026 06:06:34 GMT Small Experiment MoS₂ https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.71873?af=R https://advanced.onlinelibrary.wiley.com/doi/10.1002/adom.71873?af=R Wed, 30 Sep 2026 04:26:44 GMT Advanced Optical Materials Experiment Graphene MoS₂ https://arxiv.org/abs/2609.32392 https://arxiv.org/abs/2609.32392 Wed, 30 Sep 2026 04:00:00 GMT arXiv: Two neighboring lateral interfaces provide a spatial degree of freedom for controlling one-dimensional charge-transfer excitons within a single semiconductor monolayer. We investigate a type-II WS2-MoS2-WS2 double heterojunction using an effective-mass two-particle Hamiltonian with a screened Coulomb interaction. For… Theory MoS₂ WS₂ https://arxiv.org/abs/2609.37547v1 https://arxiv.org/abs/2609.37547v1 Tue, 29 Sep 2026 13:24:48 GMT arXiv: MoS2 has attracted significant attention for its promising applications in optoelectronics, owing to the remarkable stability of its excitons and trions. These quasiparticles have large binding energies that arise from the MoS2 moderate band gap and the unconventional screening of Coulomb interactions in low… Theory Phosphorene Graphene MoS₂ hBN https://doi.org/10.1039/d6nr02557a https://doi.org/10.1039/d6nr02557a Tue, 29 Sep 2026 00:03:22 GMT Nanoscale: Identical-location SECCM tracks changes in nanoscale HER activity and electrochemical heterogeneity across monolayer MoS 2 during sequential chemical passivation. Experiment MoS₂ https://doi.org/10.1039/d6tc02483a https://doi.org/10.1039/d6tc02483a Mon, 28 Sep 2026 09:24:53 GMT Journal of Materials Chemistry C: The present study describes the fabrication of a Molybdenum disulfide/reduced graphene oxide (MoS 2 /rGO) nanocomposite-modified carbon paste electrode for the highly sensitive electrochemical determination of albendazole (ABZ). Experiment GO / rGO Graphene MoS₂ https://doi.org/10.1039/d6tc02199a https://doi.org/10.1039/d6tc02199a Fri, 25 Sep 2026 10:33:13 GMT Journal of Materials Chemistry C: Post-deposition superacid treatment restores and strongly enhances the photoluminescence of dielectric-encapsulated monolayer MoS 2 , enabling effective chemical passivation in device-relevant structures. Experiment MoS₂ https://arxiv.org/abs/2609.30788v1 https://arxiv.org/abs/2609.30788v1 Fri, 25 Sep 2026 04:13:09 GMT arXiv: Moire superlattices in transition metal dichalcogenides provide a highly tunable platform for exploring strongly correlated electronic phases, such as generalized Wigner crystals. While these crystalline states typically melt with increasing thermal fluctuations, an electronic analogue of the Pomeranchuk effect can… Theory MoS₂ https://arxiv.org/abs/2609.30128v2 https://arxiv.org/abs/2609.30128v2 Thu, 24 Sep 2026 17:02:05 GMT arXiv: Twisted transition-metal dichalcogenides (TMDs) have manifested a rich variety of emerging physical phenomena, yet experimental studies have so far been largely limited in their valence bands (p-doped). Here, we show correlated electronic states in the conduction bands (n-doped) of near-AA-twisted bilayer MoS₂ with… Theory Experiment Graphene MoS₂ https://arxiv.org/abs/2609.30016v1 https://arxiv.org/abs/2609.30016v1 Thu, 24 Sep 2026 15:54:58 GMT arXiv: Conventional gate-stack scaling reduces dielectric thickness and increases permittivity while largely treating the position and electronic character of the gate-side screening boundary as fixed. As equivalent oxide thickness is reduced, however, finite interfacial responses can increasingly constrain gate control… Engineering Bi₂Se₃, Bi₂Te₃ MoS₂ https://doi.org/10.1021/acsnano.6c09478 https://doi.org/10.1021/acsnano.6c09478 Thu, 24 Sep 2026 11:01:52 GMT ACS Nano: As photodetectors continue to scale toward smaller device dimensions, achieving high sensitivity without sacrificing response speed remains a significant challenge for conventional silicon photodiodes. Here, we report a CMOS-compatible vertical 2D/3D hybrid photodiode consisting of trilayer molybdenum disulfide (MoS2)… Engineering Graphene MoS₂ https://www.nature.com/articles/s41586-026-11069-3 https://www.nature.com/articles/s41586-026-11069-3 Wed, 23 Sep 2026 00:00:00 GMT Nature: Two-dimensional materials Theory MoS₂ https://www.nature.com/articles/s41586-026-11069-3 https://www.nature.com/articles/s41586-026-11069-3 Wed, 23 Sep 2026 00:00:00 GMT Nature: Atomically aligned 1H bilayer MoS2 exhibits a direct band gap, enhanced excitonic emission and stronger valley polarization, establishing its potential for advanced optoelectronic and valleytronic applications. Everyone MoS₂ https://semiengineering.com/wafer-scale-sub-5nm-channel-monolayer-mos2-transistors-cmu-uf-mit-et-al/ https://semiengineering.com/wafer-scale-sub-5nm-channel-monolayer-mos2-transistors-cmu-uf-mit-et-al/ Tue, 22 Sep 2026 17:51:42 GMT Semiconductor Engineering: Researchers at Carnegie Mellon University, University of Florida, MIT, Texas A&M University et al. published a technical paper titled “Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.” Abstract Excerpt “Here, we report monolayer MoS₂ transistors with… Engineering MoS₂ https://arxiv.org/abs/2609.26661v1 https://arxiv.org/abs/2609.26661v1 Tue, 22 Sep 2026 16:24:49 GMT arXiv: Artificial-intelligence (AI) agents are beginning to enter experimental laboratories, automating experiments and accelerating scientific discovery. Herein, we introduce an AI-driven workflow in which an AI agent performs multi-step, multi-day quantum transport measurements end-to-end. Specifically, given brief… Theory MoS₂ http://link.aps.org/doi/10.1103/4cxk-zpjd http://link.aps.org/doi/10.1103/4cxk-zpjd Tue, 22 Sep 2026 10:00:00 GMT Physical Review B: Intrinsic defects govern carrier trapping and recombination in two-dimensional semiconductors, yet the microscopic origin of defect-dependent capture dynamics remains unclear. Here, we compute carrier capture coefficients of vacancy defects, treating monolayer MoS₂ as a prototype, fr… [Phys. Rev. B 114, 165421]… Theory MoS₂ https://arxiv.org/abs/2602.02273 https://arxiv.org/abs/2602.02273 Tue, 22 Sep 2026 04:00:00 GMT arXiv: Active control over optical nonlinearity in solid-state systems is central to unlocking exotic many-body phenomena and photonic devices. While exciton-polaritons in transition metal dichalcogenides (TMDs) offer a promising platform, their practical utility is impeded by fixed interactions and a trade-off between… Theory MoS₂ https://arxiv.org/abs/2609.24326 https://arxiv.org/abs/2609.24326 Tue, 22 Sep 2026 04:00:00 GMT arXiv: While much effort are now concentrated on exploration of crystalline form of MoS₂ as a two-dimensional material, we show that room-temperature DC magnetron sputtering from pressurized MoS₂ powder target produces amorphous MoSₓ films with optical properties fundamentally different from those of crystalline MoS₂. The… Experiment MoS₂ https://arxiv.org/abs/2609.25305v1 https://arxiv.org/abs/2609.25305v1 Mon, 21 Sep 2026 18:54:32 GMT arXiv: We investigate the proximity-induced spin-orbit coupling (SOC) in graphene on transition-metal dichalcogenide (TMD) heterostructures using a tight-binding approach. The tight-binding parameters of an effective 4-band model describing the low-energy physics of the graphene layer are extracted as a function of twist… Theory Graphene MoSe₂ MoS₂ WSe₂ WS₂ https://arxiv.org/abs/2409.18637 https://arxiv.org/abs/2409.18637 Mon, 21 Sep 2026 04:00:00 GMT arXiv: Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of… Theory MoS₂ https://arxiv.org/abs/2609.21300v1 https://arxiv.org/abs/2609.21300v1 Fri, 18 Sep 2026 04:21:24 GMT arXiv: Orbital angular momentum (OAM) is a promising degree of freedom for low-dissipation transport and magnetization control, yet its relaxation mechanisms remain controversial, with atomcentered approximations (ACA) predicting much shorter OAM diffusion lengths than experiments. We address this discrepancy using… Theory Silicene MoS₂ https://arxiv.org/abs/2609.20426v1 https://arxiv.org/abs/2609.20426v1 Thu, 17 Sep 2026 14:07:49 GMT arXiv: Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong gate coupling must… Theory Experiment MoS₂ http://link.aps.org/doi/10.1103/xbcw-n8sc http://link.aps.org/doi/10.1103/xbcw-n8sc Wed, 16 Sep 2026 10:00:00 GMT Physical Review B: Here, the authors determine the extreme-ultraviolet optical constants of monolayer and bilayer MoS 2 through a combined experimental and first-principles study. They establish a consistent connection between two-dimensional conductivity and an effective three-dimensional refractive index, demonstrating that the optical… Theory MoS₂ https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.78516?af=R https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.78516?af=R Tue, 15 Sep 2026 15:29:55 GMT Advanced Functional Materials Experiment MXenes MoS₂ https://arxiv.org/abs/2508.00972 https://arxiv.org/abs/2508.00972 Mon, 14 Sep 2026 04:00:00 GMT arXiv: Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously… Experiment MoS₂ https://www.nature.com/articles/s41928-026-01719-9 https://www.nature.com/articles/s41928-026-01719-9 Mon, 14 Sep 2026 00:00:00 GMT Nature: Two-dimensional materials Theory MoS₂ http://link.aps.org/doi/10.1103/91m7-7kc6 http://link.aps.org/doi/10.1103/91m7-7kc6 Fri, 11 Sep 2026 10:00:00 GMT Physical Review B: Surface charge transfer doping (SCTD) preserves the pristine crystal structure and allows precise tuning of the doping level, making it a promising strategy for modulating the properties of low-dimensional materials. In this work, we investigate the effect of surface MoO₃ molecular d… [Phys. Rev. B 114, 185416]… Theory Oxide nanosheets MoS₂ https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.70577?af=R https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.70577?af=R Fri, 11 Sep 2026 07:00:00 GMT Advanced Electronic Materials: Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026. Experiment MoS₂ https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.70519?af=R https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.70519?af=R Fri, 11 Sep 2026 07:00:00 GMT Advanced Electronic Materials: Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026. Engineering Graphene MoS₂ https://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.74953?af=R https://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.74953?af=R Fri, 11 Sep 2026 04:55:37 GMT Advanced Materials Experiment MXenes MoS₂ https://arxiv.org/abs/2609.10500v1 https://arxiv.org/abs/2609.10500v1 Wed, 09 Sep 2026 17:35:55 GMT arXiv: Two-dimensional transition metal dichalcogenides (TMDCs) are promising for low-power optoelectronics, yet their operational speed is widely considered constrained by low room-temperature mobilities and carrier transit delays. Here, by combining on-chip terahertz optoelectronic sampling with thermally evaporated Ohmic… Theory MoSe₂ MoS₂ https://iopscience.iop.org/article/10.1088/2053-1583/ae9aac https://iopscience.iop.org/article/10.1088/2053-1583/ae9aac Mon, 07 Sep 2026 23:00:00 GMT 2D Materials (IOP): Vitrimers are a new class of polymers that contain a covalent adaptable network where molecular bonds can be exchanged and reformed when heated above its Tv, providing them with stress relaxation, self-healing and reshaping abilities, which traditional thermosets lack. Herein, MoS2 and WS2 were used as nanofillers to… Experiment MoS₂ WS₂ https://arxiv.org/abs/2609.07796v1 https://arxiv.org/abs/2609.07796v1 Mon, 07 Sep 2026 17:38:52 GMT arXiv: We present a first-principles real-time approach to study non-linear response of solids at finite temperature. Finite temperature effects are included as renormalization of the quasiparticle energies and a dephasing term proportional to the quasiparticle lifetimes. We evaluate electron-phonon matrix elements from… Theory MoS₂ https://arxiv.org/abs/2609.03578v1 https://arxiv.org/abs/2609.03578v1 Thu, 03 Sep 2026 09:27:20 GMT arXiv: Atomristors, non-volatile resistive switching devices based on two-dimensional (2D) monolayers, are promising building blocks for energy-efficient memory and neuromorphic computing. However, their design remains restricted to a few materials such as MoS2 and h-BN, limiting functional diversity and design flexibility.… Theory Engineering MoS₂ BiOCl, BiOBr, BiOI hBN