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    <title>Flatland: news on PbI₂, BiI₃</title>
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    <description>The newest items tagged PbI₂, BiI₃ in the Flatland news feed.</description>
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    <lastBuildDate>Mon, 05 Oct 2026 08:10:53 GMT</lastBuildDate>
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      <title>Ultra‐High Photoresponsivity in Freestanding PbI2 Nanosheets via In Situ Uniaxial Strain Regulation (Adv. Funct. Mater. 74/2026)</title>
      <link>https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.77993?af=R</link>
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      <pubDate>Tue, 15 Sep 2026 13:35:46 GMT</pubDate>
      <description>Advanced Functional Materials: Advanced Functional Materials, Volume 36, Issue 74, 14 September 2026.</description>
      <category>Experiment</category>
      <category>PbI₂, BiI₃</category>
    </item>
    <item>
      <title>Moiré Topology in Twisted Structures with Noncollinear Spin-Orbit Coupling</title>
      <link>https://arxiv.org/abs/2609.10720v1</link>
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      <pubDate>Wed, 09 Sep 2026 18:16:00 GMT</pubDate>
      <description>arXiv: Moiré superlattices provide a powerful platform for flat bands and correlated topological phases, yet most established examples rely on valley-contrasting Berry curvature in hexagonal lattices. Here, we propose a different route to achieve topological moiré minibands based on noncollinear spin orbit coupling in…</description>
      <category>Theory</category>
      <category>PbI₂, BiI₃</category>
    </item>
    <item>
      <title>Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures</title>
      <link>https://arxiv.org/abs/2602.02256v1</link>
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      <pubDate>Mon, 02 Feb 2026 16:01:45 GMT</pubDate>
      <description>arXiv: Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications. The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has attracted considerable attention as a quantum sensor due to its demonstrated sensitivity to temperature…</description>
      <category>Theory</category>
      <category>PbI₂, BiI₃</category>
      <category>hBN</category>
    </item>
    <item>
      <title>Breaking the Boundaries of the Goldschmidt Tolerance Factor with Ethylammonium Lead Iodide Perovskite Nanocrystals</title>
      <link>https://arxiv.org/abs/2512.06788v1</link>
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      <pubDate>Sun, 07 Dec 2025 11:03:35 GMT</pubDate>
      <description>arXiv: We report the synthesis of ethylammonium lead iodide (EAPbI3) colloidal nanocrystals as another member of the lead halide perovskites family. The insertion of an unusually large A-cation (274 pm in diameter) in the perovskite structure, hitherto considered unlikely due to the unfavorable Goldschmidt tolerance factor…</description>
      <category>Experiment</category>
      <category>PbI₂, BiI₃</category>
    </item>
    <item>
      <title>Features of Surface Structuring of Direct and Indirect Band Gap Semiconductors by Femtosecond Laser</title>
      <link>https://arxiv.org/abs/2508.16758v1</link>
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      <pubDate>Fri, 22 Aug 2025 19:32:59 GMT</pubDate>
      <description>arXiv: The impact of femtosecond (fs) laser radiation on semiconductors with direct (ZnSe, GaAs, CdZnTe) band gap, with the structurally induced direct-to-indirect band gap transition (PbI2, GaSe) and indirect band gap (Si) has been studied. The fs-laser treatment of semiconductors has been performed in the multi-pulse regime…</description>
      <category>Experiment</category>
      <category>Engineering</category>
      <category>InSe, GaSe</category>
      <category>PbI₂, BiI₃</category>
    </item>
    <item>
      <title>Chern junctions in Moiré-Patterned Graphene/PbI2</title>
      <link>https://arxiv.org/abs/2508.04935v2</link>
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      <pubDate>Wed, 06 Aug 2025 23:37:06 GMT</pubDate>
      <description>arXiv: Expanding the moire material library continues to unlock novel quantum phases and emergent electronic behaviors. Here, we introduce PbI2 into the moire family and investigate the magnetotransport properties of moire superlattice in a hexagonal boron nitride/graphene/PbI2 heterostructures. In the high-field quantum Hall…</description>
      <category>Theory</category>
      <category>Experiment</category>
      <category>Graphene</category>
      <category>PbI₂, BiI₃</category>
      <category>hBN</category>
    </item>
    <item>
      <title>Dimensional control of the band-gap crossover in layered lead iodide</title>
      <link>https://arxiv.org/abs/2506.08791v2</link>
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      <pubDate>Tue, 10 Jun 2025 13:41:03 GMT</pubDate>
      <description>arXiv: Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as light-emitting diodes, solar cells, and photodetectors is closely tied to the band-gap…</description>
      <category>Experiment</category>
      <category>Theory</category>
      <category>Engineering</category>
      <category>PbI₂, BiI₃</category>
    </item>
    <item>
      <title>Correlated Structural and Optical Characterization during Van der Waals Epitaxy of PbI2 on Graphene</title>
      <link>https://arxiv.org/abs/2506.06241v1</link>
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      <pubDate>Fri, 06 Jun 2025 17:01:14 GMT</pubDate>
      <description>arXiv: Van der Waals heterostructures of 2D layered materials have gained much attention due to their flexible electronic properties, which make them promising candidates for energy, sensing, catalytic, and biomedical applications. Lead iodide (PbI2), a 2D layered semiconductor material belonging to the metal halide family…</description>
      <category>Experiment</category>
      <category>Graphene</category>
      <category>PbI₂, BiI₃</category>
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