https://flatland-pi.vercel.app/materials/sno.html The newest items tagged SnO in the Flatland news feed. en Mon, 05 Oct 2026 08:10:53 GMT https://doi.org/10.1039/d6nr02759h https://doi.org/10.1039/d6nr02759h Thu, 01 Oct 2026 22:03:22 GMT Nanoscale: Designing nanoscale composite architectures that integrate conversion/alloying-type oxide nanocrystals with conductive carbon frameworks is an effective strategy for improving the lithium-storage behavior of high-capacity anodes. Herein, we develop a coupled... Experiment GO / rGO Graphene SnO https://arxiv.org/abs/2606.13396v1 https://arxiv.org/abs/2606.13396v1 Thu, 11 Jun 2026 14:27:58 GMT arXiv: An important requirement for the integration of ferroelectric thin films into devices is deterministic control of the polarization state in films of only a few unit cells in thickness. Here, we utilize the charged atomic planes of (001)-oriented SmNiO₃ (SNO) buffer layers as a polarizing template to stabilize the… Theory SnO https://arxiv.org/abs/2605.24376v1 https://arxiv.org/abs/2605.24376v1 Sat, 23 May 2026 03:31:46 GMT arXiv: Tin monoxide (SnO) is a p-type oxide semiconductor whose electronic properties can be widely modified via atomic-scale engineering. Using density functional theory, we investigate the electronic and magnetic properties of transition-metal (TM = Mn, Fe, Co and W) doped SnO monolayer within a large supercell. We find… Theory SnO https://arxiv.org/abs/2604.05891v1 https://arxiv.org/abs/2604.05891v1 Tue, 07 Apr 2026 13:53:31 GMT arXiv: Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem applications. Adapting device structures optimized for 1.0 - 1.2 eV absorbers to wide bandgap absorbers requires modification of the buffer… Experiment Engineering SnO https://arxiv.org/abs/2604.03596v1 https://arxiv.org/abs/2604.03596v1 Sat, 04 Apr 2026 05:40:43 GMT arXiv: Realizing correlated topological semimetallic phases in bulk transition-metal oxides remains challenging due to rigid lattice symmetry, correlation-induced gap opening, and limited structural tunability. However, complex-oxide thin films and heterostructures provide a powerful platform to stabilize topological phases… Theory SnO