Germanene, stanene and plumbene

Ge, Sn, Pb

Also called heavier group-14 Xenes, germanane (hydrogenated germanene)

exists only on a substrate depends on form

The heavier cousins of silicene. Heavier atoms bring stronger spin–orbit coupling, which could make these sheets conduct only along their edges and without resistance – a quantum spin Hall insulator. That promise drives the research; in practice all of them must be grown atom by atom on specific crystal surfaces and interact strongly with them.

Crystal structure

  • Ge
Cell
Hexagonal, a = 3.97 Å
Atoms per cell
2
Ge–Ge bond
2.38 Å
Height
0.64 Å between the outer atom centres
The low-buckled honeycomb of silicene, with more buckling: 0.64 Å. Going down the group from silicon to tin and lead, the atoms get heavier, the buckling grows and spin–orbit coupling strengthens, which is why stanene is a candidate quantum spin Hall insulator with a gap of order 0.1 eV. Stanene and plumbene are predicted to take the same buckled form. DFT (LDA) prediction for the free-standing sheet: a = 3.97 Å, buckling 0.64 Å.

Key properties

  • Predicted spin–orbit gap ~24 meV for germanene and ~0.1 eV for stanene (free-standing, DFT)
  • Stanene first grown on Bi2Te3(111) in 2015; an ultraflat stanene with band inversion reported on Cu(111)
  • Germanane, made by removing calcium from CaGe2, is a direct-gap semiconductor of ~1.5 eV and far more air-stable than germanene
  • Plumbene, the lead member, was first reported by epitaxial growth in 2019

How it is made

  • MBE on metal or topological-insulator substrates – Au(111), Al(111), Cu(111), Bi2Te3, InSb(111)
  • Topotactic deintercalation of Zintl phases such as CaGe2 to form hydrogen- or methyl-terminated layers
  • Segregation growth, in which germanium reaches the surface through a thin metal film

Uses, and how close they are

  • Quantum spin Hall edge-state deviceslab
  • Germanane as a direct-gap semiconductor for optoelectronicslab

Readiness runs lab → prototype → pilot → deployed.

Open problems

  1. Can a heavy Xene be grown on a substrate weak enough to preserve its predicted topological gap – and can helical edge conduction be shown in transport?
  2. How much of the measured electronic structure reflects surface alloying rather than a genuine Xene?
  3. Can functionalised versions such as fluorinated stanene deliver quantum spin Hall behaviour at room temperature?

Going deeper

Short notes for specialists. Choose a lens in the header and yours comes first.

For theoreticians · your lens

A natural home for Kane–Mele physics with large spin–orbit coupling. Include SOC self-consistently and model the substrate explicitly, because strain and hybridisation can close or invert the gap. Hybrid functionals and GW shift band inversions; compute Z2 invariants (for example via Wannier charge centres) for the supported geometry, not only the free-standing one.

For experimentalists · your lens

In-situ STM/STS, LEED and ARPES are essential. Edge-state claims from STS need spatially resolved spectra along clean edges. Distinguish buckled Xene reconstructions from surface alloys by combining STM with core-level spectroscopy and simulated images.

For engineers · your lens

Not manufacturable: vacuum epitaxy on specialised single-crystal substrates and poor air stability. Germanane, made by wet chemistry from Zintl phases, is the only family member with a plausible processing route.

In the research tracks

Recent news

The newest items tagged Germanene, stanene, from the news feed updated 5 Oct 2026.

Preprintnot yet peer reviewed arXiv

Decorated electronic kagome lattice in twisted bilayer germanene

Artificial kagome lattices provide a route to electronic flat bands, geometric frustration, and correlation driven phases, but their realization in atomically controlled two-dimensional materials remains scarce. Here, we show that commensurate twisted bilayer germanene on Ge2Pt produces two electronically distinct…

TheoryExperimentGermanene, stanene
Preprintnot yet peer reviewed arXiv

First principles calculations of electric-field-driven topological phase transitions in silicene, germanene and stanene

The emergence of two-dimensional topological materials, particularly the group-14 monolayers known as silicene, germanene, and stanene has opened promising pathways for next-generation nanoelectronics and spintronics. Their buckled honeycomb structure and strong spin-orbit coupling allow for bandgap engineering via a…

Preprintnot yet peer reviewed arXiv

Low bending rigidity and large Young's modulus drive strong flexural phonon renormalization in two-dimensional monolayers

Many intriguing phenomena such as the wave-like hydrodynamic heat flow, the logarithmic divergence of electrical resistivity at low temperatures and microscale kirigami are driven by flexural acoustic (ZA) phonons in two-dimensional (2D) materials. Yet, a definitive first-principles description of their dispersion…

Preprintnot yet peer reviewed arXiv

Electron-phonon physics at the exascale: A hybrid MPI-GPU-OpenMP framework for scalable Wannier interpolation

We demonstrate a highly efficient GPU implementation of the Wannier interpolation of electron-phonon matrix elements in the EPW code. Building on a systematic analysis of the computational complexity of the algorithm for electron-phonon interpolation, we designed a GPU porting strategy that integrates naturally into…

All 5 items tagged Germanene, stanene in the news feed  ·  RSS feed for Germanene, stanene

Key references

  1. Stability and exfoliation of germanane: a germanium graphane analogueBianco et al. · ACS Nano 7, 4414 (2013)cited by 1,105doi:10.1021/nn4009406
  2. Germanene: a novel two-dimensional germanium allotrope akin to graphene and siliceneDávila et al. · New Journal of Physics 16, 095002 (2014)cited by 1,610doi:10.1088/1367-2630/16/9/095002
  3. Epitaxial growth of two-dimensional staneneZhu et al. · Nature Materials 14, 1020 (2015)cited by 1,799doi:10.1038/nmat4384
  4. Large-gap quantum spin Hall insulators in tin filmsXu et al. · Physical Review Letters 111, 136804 (2013)cited by 1,330doi:10.1103/PhysRevLett.111.136804