Catalogue · 74 families in 12 groups

The materials

Every family on this site, from graphene to layered perovskites: what it is, how it is made, how stable it is, and how close it is to real use. Not everything called a 2D material is two-dimensional in the same way, so each card says what kind of sheet it really is.

  • van der Waals crystal Peels off a layered crystal, one sheet at a time · 58
  • nanosheet Made by chemistry or cut from a solid, not peeled as a clean crystal layer · 12
  • exists only on a substrate Only stable on the surface it was grown on · 3
  • an interface, not a sheet A conducting layer where two crystals meet · 1
Thickness
4 families

Carbon

Graphene and its relatives: stacked and twisted graphene, oxidised graphene made in bulk by chemistry, and carbon networks that include triple bonds.

4 families

Nitrides

Hexagonal boron nitride, the flat insulator most high-quality 2D devices are built on, graphitic carbon nitride, a light-absorbing photocatalyst, MoSi2N4, a nitride monolayer that only exists because silicon caps it, and an electride whose interlayer space holds electrons instead of atoms.

13 families

Transition metal dichalcogenides

A layer of metal atoms sandwiched between two layers of sulfur, selenium or tellurium. The family spans semiconductors that glow as monolayers, metals, superconductors and topological materials.

MoS₂ Molybdenum disulfide van der Waals crystal
type
semiconductor
thickness
~0.65 nm per layer
band gap
1.2–2.5 eV
most mature
deployed
Dry lubricant and hydrodesulfurisation catalyst (bulk MoS2)
WS₂ Tungsten disulfide van der Waals crystal
type
semiconductor
thickness
~0.62–0.65 nm per layer
band gap
1.3–2 eV
most mature
deployed
Lubricant additives (WS2 nanoparticles and nanosheets)
MoSe₂ Molybdenum diselenide van der Waals crystal
type
semiconductor
thickness
~0.65–0.7 nm per layer
band gap
1.1–2.18 eV
most mature
lab
Excitonic, polaritonic and valleytronic research devices
WSe₂ Tungsten diselenide van der Waals crystal
type
semiconductor
thickness
~0.65–0.7 nm per layer
band gap
1.2–1.65 eV
most mature
prototype
p-type channels for complementary 2D logic
MoTe₂ Molybdenum ditelluride van der Waals crystal
type
depends on form
thickness
~0.7 nm per layer
band gap
1–1.1 eV
most mature
lab
Phase-engineered ohmic contacts for 2D transistors
WTe₂ Tungsten ditelluride van der Waals crystal
type
depends on form
thickness
~0.7 nm per layer
most mature
lab
Topological edge-state and superconducting research devices
NbSe₂, NbS₂, NbTe₂ Niobium diselenide and disulfide van der Waals crystal
type
superconductor
thickness
~0.63 nm per layer
band gap
none
most mature
lab
Superconducting contacts and Josephson junctions in van der Waals stacks
TaS₂, TaSe₂ Tantalum disulfide and diselenide van der Waals crystal
type
depends on form
thickness
~0.6 nm per layer
most mature
lab
Ultrafast memristive switches and oscillators
TiSe₂, ZrSe₂, HfSe₂ Titanium, zirconium and hafnium dichalcogenides van der Waals crystal
type
depends on form
thickness
~0.57–0.66 nm per layer
band gap
0.5–1.2 eV
most mature
prototype
Lithium and sodium battery electrodes (TiS2)
VSe₂, CrTe₂, CrSe₂ Vanadium and chromium dichalcogenides van der Waals crystal
type
depends on form
thickness
~0.58–0.65 nm per layer
band gap
none
most mature
lab
Room-temperature 2D ferromagnets for spintronic devices (CrTe2)
ReS₂, ReSe₂ Rhenium disulfide and diselenide van der Waals crystal
type
semiconductor
thickness
~0.7 nm per layer
band gap
1.2–1.5 eV
most mature
lab
Polarisation-sensitive photodetectors
PtSe₂, PdSe₂, ditellurides Platinum, palladium and nickel dichalcogenides van der Waals crystal
type
depends on form
thickness
~0.5 nm per PtSe₂ layer
band gap
0–1.3 eV
most mature
prototype
Sensors and photodetectors grown directly on silicon back-end-of-line
Janus MoSSe Janus transition metal dichalcogenides van der Waals crystal
type
semiconductor
thickness
~0.65 nm
band gap
1.7 eV
most mature
lab
Photocatalytic water splitting using the built-in field (proposed)
13 families

Other layered chalcogenides

Layered sulfides, selenides and tellurides beyond the dichalcogenides, of main-group metals, iron, copper and other transition metals: fast semiconductors, thermoelectrics, ferroelectrics, topological insulators, Weyl and Dirac semimetals, iron-based superconductors, and chain compounds whose electrons move mostly in one direction.

InSe, GaSe Indium selenide and gallium selenide van der Waals crystal
type
semiconductor
thickness
~0.8 nm per layer
band gap
1.26–2 eV
most mature
deployed
Nonlinear optics and terahertz generation (bulk GaSe crystals)
SnS₂, SnSe₂ Tin disulfide and diselenide van der Waals crystal
type
semiconductor
thickness
~0.59 nm
band gap
1–2.3 eV
most mature
lab
Photodetectors and photocatalysts
SnSe, GeSe Tin and germanium monochalcogenides van der Waals crystal
type
semiconductor
thickness
~0.55–0.6 nm per layer
band gap
0.9–1.6 eV
most mature
prototype
Thermoelectric generators (bulk SnSe)
FeSe, FeTeSe Iron selenide and iron telluride selenide van der Waals crystal
type
superconductor
thickness
~0.55 nm per FeSe layer
band gap
none
most mature
lab
A platform for Majorana bound states in topological quantum computing research
Bi₂Se₃, Bi₂Te₃ Bismuth selenide and telluride van der Waals crystal
type
semiconductor
thickness
~0.95–1.0 nm per quintuple layer
band gap
0.15–0.3 eV
most mature
deployed
Peltier coolers and thermoelectric generators (bulk Bi2Te3 alloys)
TaIrTe₄, ZrTe₅, HfTe₅ Weyl and Dirac semimetal tellurides van der Waals crystal
type
semimetal
thickness
~0.66 nm per TaIrTe₄ layer
most mature
lab
Zero-bias rectifiers for harvesting radio-frequency energy
Sb₂Se₃, Sb₂S₃ Antimony chalcogenides van der Waals crystal
type
semiconductor
thickness
Ribbons are ~1 nm wide
band gap
1.2–1.7 eV
most mature
prototype
Thin-film solar absorbers (Sb2Se3, Sb2S3)
PbTaSe₂ Nodal-line superconductor PbTaSe₂ van der Waals crystal
type
superconductor
thickness
~0.9 nm per repeat
band gap
none
most mature
lab
Model system for topological superconductivity and Majorana searches
LaTe₃, GdTe₃, ErTe₃ Rare-earth tritellurides van der Waals crystal
type
metal
thickness
~1.2 nm per layer
band gap
none
most mature
lab
Model system for charge-density-wave physics and its ultrafast control
CuInP₂S₆, CuCrP₂S₆ Copper thiophosphate ferroelectrics van der Waals crystal
type
insulator
thickness
~0.65 nm per layer
band gap
2.7–2.9 eV
most mature
lab
Non-volatile ferroelectric memory: ferroelectric diodes and transistors
TiS₃, ZrTe₃, NbSe₃, TaSe₃ Quasi-one-dimensional trichalcogenides van der Waals crystal
type
depends on form
thickness
~0.9 nm per TiS₃ layer
band gap
1–2 eV
most mature
lab
Polarisation-sensitive photodetectors (TiS3, ZrS3)
Ta₂NiSe₅ Tantalum nickel selenide van der Waals crystal
type
semiconductor
thickness
~0.6 nm per layer
band gap
0.16 eV
most mature
lab
Model system for excitonic condensation and correlated band gaps
In₂Se₃ Indium selenide ferroelectrics van der Waals crystal
type
semiconductor
thickness
Monolayer flakes measure ~1.2 nm
band gap
1.3 eV
most mature
lab
Ferroelectric semiconductor field-effect transistors for non-volatile memory
5 families

Layered intermetallics and pnictides

Layered compounds of metals, semimetals and pnictogens – sometimes capped by a halogen skin – that cleave into thin flakes, along a van der Waals gap or a layer of alkali ions. Trigonal PtBi2 is a Weyl semimetal whose surfaces superconduct while its bulk stays normal.

6 families

Xenes

Single-element sheets beyond carbon: silicon, germanium, tin, lead, boron, phosphorus, antimony, bismuth and tellurium. Several exist only on the surface they were grown on.

1 family

MXenes

Metallic carbides and nitrides made by etching one element out of a layered ceramic. They disperse in water and are already made in kilogram batches.

11 families

2D magnets

Crystals that stay magnetic down to one or a few atomic layers, first shown in 2017.

CrI₃, VI₃, TiCl₃ Transition-metal trihalides van der Waals crystal
type
magnet
thickness
~0.6–0.7 nm per layer
band gap
1.2–2 eV
most mature
lab
Spin-filter tunnel junctions and magnetic memory concepts
α-RuCl₃ Ruthenium trichloride and Kitaev magnets van der Waals crystal
type
magnet
thickness
~0.57 nm per layer
band gap
1–1.9 eV
most mature
lab
A test platform for Kitaev spin liquids, whose anyons underlie proposals for topological quantum computing
NiI₂, FeCl₂, CoCl₂ Transition-metal dihalides van der Waals crystal
type
magnet
thickness
~0.6–0.65 nm per layer
most mature
lab
Magnetoelectric coupling: switching magnetism with electric fields, or polarisation with magnetic fields
Nb₃Cl₈, Nb₃Br₈, Nb₃I₈ Breathing-kagome niobium halides van der Waals crystal
type
insulator
thickness
Three atomic planes
most mature
lab
Superconducting diodes for low-dissipation cryogenic electronics
Cr₂Ge₂Te₆ Chromium germanium telluride van der Waals crystal
type
magnet
thickness
~0.7 nm per layer
band gap
0.2–0.4 eV
most mature
lab
Magnetic semiconductor spintronic devices
CrSBr Chromium sulfide bromide van der Waals crystal
type
magnet
thickness
~0.8 nm per layer
band gap
1.3–1.5 eV
most mature
lab
Magneto-optical and magnonic devices
Fe₃GeTe₂, Fe₃GaTe₂ Iron germanium and gallium tellurides van der Waals crystal
type
magnet
thickness
~0.8 nm per Fe₃GeTe₂ layer
band gap
none
most mature
lab
All-van-der-Waals magnetic tunnel junctions and spin–orbit torque devices
MPS₃ Transition-metal phosphorus trisulfides van der Waals crystal
type
magnet
thickness
~0.65 nm per layer
band gap
1.5–3 eV
most mature
lab
Antiferromagnetic spintronics and magnonics
CrPS₄ Chromium thiophosphate van der Waals crystal
type
magnet
thickness
~0.6 nm per layer
band gap
1.3 eV
most mature
lab
Magnon-based information transport and storage (magnonics)
Mn₃Si₂Te₆ Colossal magnetoresistance ferrimagnet Mn₃Si₂Te₆ van der Waals crystal
type
magnet
thickness
~0.7 nm per layer
most mature
lab
Research platform for orbital-current physics and angle-dependent magnetoresistance
MnBi₂Te₄ Manganese bismuth telluride van der Waals crystal
type
magnet
thickness
~1.4 nm per septuple layer
band gap
0.2 eV
most mature
lab
Lossless edge-channel electronics and field-free resistance standards based on the quantum anomalous Hall effect
7 families

Mixed-anion layers

Layers built from two kinds of anion: a chalcogen and a halogen, oxygen and a halogen, oxygen and a heavier chalcogen, or nitrogen and a halogen. The mixed bonding breaks symmetries that simpler compounds keep, giving polar Janus semiconductors, giant spin splitting, ferroelectric layers, exceptionally strong nonlinear optics and layered photocatalysts.

4 families

Oxides and hydroxides

Oxide and hydroxide nanosheets, including clays and catalysts, and one special case: the conducting layer that forms where two insulating oxide crystals meet.

3 families

Layered halides and perovskites

Sheets of metal halide, either bare – as in PbI2 and BiI3, which stop X-rays and seed perovskite films – or separated by layers of organic molecules, which is how perovskite solar cells are made more stable.

3 families

Frameworks

Porous sheets assembled from organic molecules, with or without metal atoms, whose structure is designed before it is made – and dense hybrids in which inorganic sheets alternate with layers of organic ligands.

Band gaps compared

The band gap decides whether a material conducts, switches or glows, and which light it absorbs. 40 families on one scale, narrowest first.

  1. PtSe2, PdSe2, ditellurides0–1.3 eV
  2. Bi2Se3, Bi2Te30.15–0.3 eV
  3. Ta2NiSe50.16 eV
  4. MnBi2Te40.2 eV
  5. Cr2Ge2Te60.2–0.4 eV
  6. Phosphorene0.3–2 eV
  7. Tellurene0.33–1 eV
  8. TiSe2, ZrSe2, HfSe20.5–1.2 eV
  9. GeAs, GeP, SiAs0.5–2 eV
  10. SnO0.7–2.7 eV
  11. Bi2O2Se0.8 eV
  12. RhSeCl, RhTeCl0.8–1.4 eV
  13. SnSe, GeSe0.9–1.6 eV
  14. MoTe21–1.1 eV
  15. α-RuCl31–1.9 eV
  16. TiS3, ZrTe3, NbSe3, TaSe31–2 eV
  17. SnS2, SnSe21–2.3 eV
  18. MoSe21.1–2.18 eV
  19. ReS2, ReSe21.2–1.5 eV
  20. WSe21.2–1.65 eV
  21. Sb2Se3, Sb2S31.2–1.7 eV
  22. CrI3, VI3, TiCl31.2–2 eV
  23. MoS21.2–2.5 eV
  24. InSe, GaSe1.26–2 eV
  25. In2Se31.3 eV
  26. CrPS41.3 eV
  27. CrSBr1.3–1.5 eV
  28. WS21.3–2 eV
  29. MPS31.5–3 eV
  30. 2D COFs1.5–3 eV
  31. SbSI, BiSI1.6–2 eV
  32. 2D perovskites1.6–2.4 eV
  33. PbI2, BiI31.67–2.3 eV
  34. Janus MoSSe1.7 eV
  35. BiOCl, BiOBr, BiOI1.8–3.2 eV
  36. MoSi2N41.94 eV
  37. Oxide nanosheets2.3–8 eV
  38. g-C3N42.7 eV
  39. CuInP2S6, CuCrP2S62.7–2.9 eV
  40. hBN5.95–6 eV
Each bar runs from the smallest to the largest band gap the material’s own page gives: bulk and monolayer, optical and electronic, and every compound in the family. A dot is a single stated value, or a range too narrow to draw. Gaps between about 1.65 and 3.26 eV match visible light. Select a material for the details.

No gap: metals and semimetalsGraphene · Ca2N · NbSe2, NbS2, NbTe2 · VSe2, CrTe2, CrSe2 · FeSe, FeTeSe · PbTaSe2 · LaTe3, GdTe3, ErTe3 · PtBi2 · CeSiI · CsV3Sb5, KV3Sb5 · Borophene · Fe3GeTe2, Fe3GaTe2