Catalogue · 74 families in 12 groups
The materials
Every family on this site, from graphene to layered perovskites: what it is, how it is made, how stable it is, and how close it is to real use. Not everything called a 2D material is two-dimensional in the same way, so each card says what kind of sheet it really is.
- van der Waals crystal Peels off a layered crystal, one sheet at a time · 58
- nanosheet Made by chemistry or cut from a solid, not peeled as a clean crystal layer · 12
- exists only on a substrate Only stable on the surface it was grown on · 3
- an interface, not a sheet A conducting layer where two crystals meet · 1
More filters
Vapour transport and flux growth make bulk crystals, which are then exfoliated. Read from each family’s own “How it’s made”; the Basics page explains the methods.
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All 74 families
Containsany element
Pick one or more elements; a family must contain all of them.
Carbon
Graphene and its relatives: stacked and twisted graphene, oxidised graphene made in bulk by chemistry, and carbon networks that include triple bonds.
- type
- semimetal
- thickness
- ~0.335 nm
- band gap
- none
- most mature
- deployed
- type
- depends on form
- thickness
- ~0.7 nm
- most mature
- lab
- type
- depends on form
- thickness
- ~0.8–1.2 nm per GO sheet
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.35 nm interlayer spacing in layered graphdiyne
- most mature
- lab
Nitrides
Hexagonal boron nitride, the flat insulator most high-quality 2D devices are built on, graphitic carbon nitride, a light-absorbing photocatalyst, MoSi2N4, a nitride monolayer that only exists because silicon caps it, and an electride whose interlayer space holds electrons instead of atoms.
- type
- insulator
- thickness
- ~0.33 nm
- band gap
- 5.95–6 eV
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.32–0.33 nm interlayer spacing
- band gap
- 2.7 eV
- most mature
- prototype
- type
- metal
- thickness
- ~0.6 nm per layer
- band gap
- none
- most mature
- lab
- type
- semiconductor
- thickness
- ~1 nm per septuple layer
- band gap
- 1.94 eV
- most mature
- lab
Transition metal dichalcogenides
A layer of metal atoms sandwiched between two layers of sulfur, selenium or tellurium. The family spans semiconductors that glow as monolayers, metals, superconductors and topological materials.
- type
- semiconductor
- thickness
- ~0.65 nm per layer
- band gap
- 1.2–2.5 eV
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.62–0.65 nm per layer
- band gap
- 1.3–2 eV
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.65–0.7 nm per layer
- band gap
- 1.1–2.18 eV
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.65–0.7 nm per layer
- band gap
- 1.2–1.65 eV
- most mature
- prototype
- type
- depends on form
- thickness
- ~0.7 nm per layer
- band gap
- 1–1.1 eV
- most mature
- lab
- type
- depends on form
- thickness
- ~0.7 nm per layer
- most mature
- lab
- type
- superconductor
- thickness
- ~0.63 nm per layer
- band gap
- none
- most mature
- lab
- type
- depends on form
- thickness
- ~0.6 nm per layer
- most mature
- lab
- type
- depends on form
- thickness
- ~0.57–0.66 nm per layer
- band gap
- 0.5–1.2 eV
- most mature
- prototype
- type
- depends on form
- thickness
- ~0.58–0.65 nm per layer
- band gap
- none
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.7 nm per layer
- band gap
- 1.2–1.5 eV
- most mature
- lab
- type
- depends on form
- thickness
- ~0.5 nm per PtSe₂ layer
- band gap
- 0–1.3 eV
- most mature
- prototype
- type
- semiconductor
- thickness
- ~0.65 nm
- band gap
- 1.7 eV
- most mature
- lab
Other layered chalcogenides
Layered sulfides, selenides and tellurides beyond the dichalcogenides, of main-group metals, iron, copper and other transition metals: fast semiconductors, thermoelectrics, ferroelectrics, topological insulators, Weyl and Dirac semimetals, iron-based superconductors, and chain compounds whose electrons move mostly in one direction.
- type
- semiconductor
- thickness
- ~0.8 nm per layer
- band gap
- 1.26–2 eV
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.59 nm
- band gap
- 1–2.3 eV
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.55–0.6 nm per layer
- band gap
- 0.9–1.6 eV
- most mature
- prototype
- type
- superconductor
- thickness
- ~0.55 nm per FeSe layer
- band gap
- none
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.95–1.0 nm per quintuple layer
- band gap
- 0.15–0.3 eV
- most mature
- deployed
- type
- semimetal
- thickness
- ~0.66 nm per TaIrTe₄ layer
- most mature
- lab
- type
- semiconductor
- thickness
- Ribbons are ~1 nm wide
- band gap
- 1.2–1.7 eV
- most mature
- prototype
- type
- superconductor
- thickness
- ~0.9 nm per repeat
- band gap
- none
- most mature
- lab
- type
- metal
- thickness
- ~1.2 nm per layer
- band gap
- none
- most mature
- lab
- type
- insulator
- thickness
- ~0.65 nm per layer
- band gap
- 2.7–2.9 eV
- most mature
- lab
- type
- depends on form
- thickness
- ~0.9 nm per TiS₃ layer
- band gap
- 1–2 eV
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.6 nm per layer
- band gap
- 0.16 eV
- most mature
- lab
- type
- semiconductor
- thickness
- Monolayer flakes measure ~1.2 nm
- band gap
- 1.3 eV
- most mature
- lab
Layered intermetallics and pnictides
Layered compounds of metals, semimetals and pnictogens – sometimes capped by a halogen skin – that cleave into thin flakes, along a van der Waals gap or a layer of alkali ions. Trigonal PtBi2 is a Weyl semimetal whose surfaces superconduct while its bulk stays normal.
- type
- semimetal
- thickness
- Exfoliated flakes studied so far are ~20–130 nm thick
- band gap
- none
- most mature
- lab
- type
- magnet
- thickness
- ~0.9 nm per layer
- most mature
- lab
- type
- metal
- thickness
- ~1 nm per layer
- band gap
- none
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.5–1 nm per layer
- band gap
- 0.5–2 eV
- most mature
- lab
- type
- superconductor
- thickness
- ~0.9 nm per layer
- band gap
- none
- most mature
- lab
Xenes
Single-element sheets beyond carbon: silicon, germanium, tin, lead, boron, phosphorus, antimony, bismuth and tellurium. Several exist only on the surface they were grown on.
- type
- semimetal
- thickness
- One buckled atomic layer
- most mature
- lab
- type
- depends on form
- thickness
- One buckled atomic layer
- most mature
- lab
- type
- metal
- thickness
- One atomic layer
- band gap
- none
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.53 nm
- band gap
- 0.3–2 eV
- most mature
- prototype
- type
- depends on form
- thickness
- ~0.35–0.4 nm per buckled layer
- most mature
- lab
- type
- semiconductor
- thickness
- Solution-grown flakes typically 10–100 nm
- band gap
- 0.33–1 eV
- most mature
- prototype
MXenes
Metallic carbides and nitrides made by etching one element out of a layered ceramic. They disperse in water and are already made in kilogram batches.
2D magnets
Crystals that stay magnetic down to one or a few atomic layers, first shown in 2017.
- type
- magnet
- thickness
- ~0.6–0.7 nm per layer
- band gap
- 1.2–2 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.57 nm per layer
- band gap
- 1–1.9 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.6–0.65 nm per layer
- most mature
- lab
- type
- insulator
- thickness
- Three atomic planes
- most mature
- lab
- type
- magnet
- thickness
- ~0.7 nm per layer
- band gap
- 0.2–0.4 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.8 nm per layer
- band gap
- 1.3–1.5 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.8 nm per Fe₃GeTe₂ layer
- band gap
- none
- most mature
- lab
- type
- magnet
- thickness
- ~0.65 nm per layer
- band gap
- 1.5–3 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.6 nm per layer
- band gap
- 1.3 eV
- most mature
- lab
- type
- magnet
- thickness
- ~0.7 nm per layer
- most mature
- lab
- type
- magnet
- thickness
- ~1.4 nm per septuple layer
- band gap
- 0.2 eV
- most mature
- lab
Mixed-anion layers
Layers built from two kinds of anion: a chalcogen and a halogen, oxygen and a halogen, oxygen and a heavier chalcogen, or nitrogen and a halogen. The mixed bonding breaks symmetries that simpler compounds keep, giving polar Janus semiconductors, giant spin splitting, ferroelectric layers, exceptionally strong nonlinear optics and layered photocatalysts.
- type
- semiconductor
- thickness
- ~0.58 nm per RhSeCl layer
- band gap
- 0.8–1.4 eV
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.65 nm per Te–Bi–Br layer
- most mature
- lab
- type
- depends on form
- thickness
- ~0.65–0.8 nm per layer
- most mature
- lab
- type
- superconductor
- thickness
- ~0.9 nm per layer
- most mature
- lab
- type
- semiconductor
- thickness
- Chains are ~1 nm across
- band gap
- 1.6–2 eV
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.74 nm per BiOCl layer
- band gap
- 1.8–3.2 eV
- most mature
- deployed
- type
- semiconductor
- thickness
- ~0.6 nm per layer
- band gap
- 0.8 eV
- most mature
- lab
Oxides and hydroxides
Oxide and hydroxide nanosheets, including clays and catalysts, and one special case: the conducting layer that forms where two insulating oxide crystals meet.
- type
- semiconductor
- thickness
- ~0.5 nm per layer
- band gap
- 0.7–2.7 eV
- most mature
- lab
- type
- depends on form
- thickness
- ~0.7 nm per α-MoO₃ layer
- band gap
- 2.3–8 eV
- most mature
- deployed
- type
- depends on form
- thickness
- Electron gas confined within roughly 1–10 nm of the interface
- most mature
- lab
- type
- depends on form
- thickness
- ~0.48 nm per hydroxide layer
- most mature
- deployed
Layered halides and perovskites
Sheets of metal halide, either bare – as in PbI2 and BiI3, which stop X-rays and seed perovskite films – or separated by layers of organic molecules, which is how perovskite solar cells are made more stable.
- type
- semiconductor
- thickness
- ~0.7 nm per PbI₂ layer
- band gap
- 1.67–2.3 eV
- most mature
- deployed
- type
- insulator
- thickness
- ~1 nm per layer
- most mature
- lab
- type
- semiconductor
- thickness
- ~0.6 nm per octahedral layer
- band gap
- 1.6–2.4 eV
- most mature
- pilot
Frameworks
Porous sheets assembled from organic molecules, with or without metal atoms, whose structure is designed before it is made – and dense hybrids in which inorganic sheets alternate with layers of organic ligands.
- type
- semiconductor
- thickness
- ~1.5 nm per hybrid layer
- most mature
- lab
- type
- depends on form
- thickness
- ~0.33 nm interlayer spacing in π-stacked conductive MOFs
- most mature
- prototype
- type
- depends on form
- thickness
- ~0.34–0.37 nm interlayer spacing in stacked COFs
- band gap
- 1.5–3 eV
- most mature
- lab
No family matches these filters.
Band gaps compared
The band gap decides whether a material conducts, switches or glows, and which light it absorbs. 40 families on one scale, narrowest first.
- PtSe2, PdSe2, ditellurides0–1.3 eV
- Bi2Se3, Bi2Te30.15–0.3 eV
- Ta2NiSe50.16 eV
- MnBi2Te40.2 eV
- Cr2Ge2Te60.2–0.4 eV
- Phosphorene0.3–2 eV
- Tellurene0.33–1 eV
- TiSe2, ZrSe2, HfSe20.5–1.2 eV
- GeAs, GeP, SiAs0.5–2 eV
- SnO0.7–2.7 eV
- Bi2O2Se0.8 eV
- RhSeCl, RhTeCl0.8–1.4 eV
- SnSe, GeSe0.9–1.6 eV
- MoTe21–1.1 eV
- α-RuCl31–1.9 eV
- TiS3, ZrTe3, NbSe3, TaSe31–2 eV
- SnS2, SnSe21–2.3 eV
- MoSe21.1–2.18 eV
- ReS2, ReSe21.2–1.5 eV
- WSe21.2–1.65 eV
- Sb2Se3, Sb2S31.2–1.7 eV
- CrI3, VI3, TiCl31.2–2 eV
- MoS21.2–2.5 eV
- InSe, GaSe1.26–2 eV
- In2Se31.3 eV
- CrPS41.3 eV
- CrSBr1.3–1.5 eV
- WS21.3–2 eV
- MPS31.5–3 eV
- 2D COFs1.5–3 eV
- SbSI, BiSI1.6–2 eV
- 2D perovskites1.6–2.4 eV
- PbI2, BiI31.67–2.3 eV
- Janus MoSSe1.7 eV
- BiOCl, BiOBr, BiOI1.8–3.2 eV
- MoSi2N41.94 eV
- Oxide nanosheets2.3–8 eV
- g-C3N42.7 eV
- CuInP2S6, CuCrP2S62.7–2.9 eV
- hBN5.95–6 eV
No gap: metals and semimetalsGraphene · Ca2N · NbSe2, NbS2, NbTe2 · VSe2, CrTe2, CrSe2 · FeSe, FeTeSe · PbTaSe2 · LaTe3, GdTe3, ErTe3 · PtBi2 · CeSiI · CsV3Sb5, KV3Sb5 · Borophene · Fe3GeTe2, Fe3GaTe2
Readiness compared
How far each family has got, judged by its most advanced use. Most are still laboratory work.
In products
11 of 74 sold or in routine usePilot production
1 of 74 made at scale, not yet sold widelyPrototypes
10 of 74 working devices, no productionLaboratory only
52 of 74 studied, not yet used- Twisted graphene
- Graphyne
- Ca2N
- MoSi2N4
- MoSe2
- MoTe2
- WTe2
- NbSe2, NbS2, NbTe2
- TaS2, TaSe2
- VSe2, CrTe2, CrSe2
- ReS2, ReSe2
- Janus MoSSe
- SnS2, SnSe2
- FeSe, FeTeSe
- TaIrTe4, ZrTe5, HfTe5
- PbTaSe2
- LaTe3, GdTe3, ErTe3
- CuInP2S6, CuCrP2S6
- TiS3, ZrTe3, NbSe3, TaSe3
- Ta2NiSe5
- In2Se3
- PtBi2
- EuSn2As2
- CeSiI
- GeAs, GeP, SiAs
- CsV3Sb5, KV3Sb5
- Silicene
- Germanene, stanene
- Borophene
- Antimonene, bismuthene
- CrI3, VI3, TiCl3
- α-RuCl3
- NiI2, FeCl2, CoCl2
- Nb3Cl8, Nb3Br8, Nb3I8
- Cr2Ge2Te6
- CrSBr
- Fe3GeTe2, Fe3GaTe2
- MPS3
- CrPS4
- Mn3Si2Te6
- MnBi2Te4
- RhSeCl, RhTeCl
- BiTeX
- NbOI2, CrOCl, TiOCl
- ZrNCl, HfNCl
- SbSI, BiSI
- Bi2O2Se
- SnO
- LaAlO3/SrTiO3
- Bi4Br4
- Mithrene (AgSePh)
- 2D COFs