In plain words

A spot in a crystal where a sulfur, selenium or tellurium atom is missing. It is the most commonly reported flaw in these materials, and it is easily confused with an oxygen atom sitting in its place.

Going deeper

Left: a lattice seen from above with a missing chalcogen atom drawn as a dashed empty circle and, elsewhere, an oxygen atom sitting in a chalcogen site. Right: a real vacancy leaves a level inside the band gap that traps carriers, while a substituted oxygen leaves the gap clean. a missing atom, or a different one vacancy oxygen in an electron-microscope image the two look much alike, which is why the common defect was long assumed to be a vacancy defect densities reach 10¹³ per cm², and which kind dominates depends on the growth but they do different things a level in the gap a real vacancy traps carriers no level in the gap oxygen substituted gap stays clean blaming a vacancy needs evidence
A missing sulfur, selenium or tellurium atom is the most frequently reported defect in TMDCs – but an oxygen atom sitting in the same site looks very similar in an electron-microscope image and behaves quite differently, leaving no states in the gap.

The most reported defect

Chalcogen vacancies have a low formation energy in vacuum and are seen readily in , so they became the default explanation for almost everything: unintentional doping, trap-limited , quenched emission, activity at the basal plane. A systematic study of MoS2 made by , and physical vapour deposition found defect densities up to about 3.5 × 1013 per cm2 and that which defect dominates depends on how the crystal was made: sulfur vacancies in exfoliated and CVD material, molybdenum in PVD material.

That dependence is the first warning against generalising: “the defects in MoS2” is not a single thing.

Often it is oxygen instead

The electron beam itself creates chalcogen vacancies, so imaging a vacancy does not prove it was there before. And a site occupied by an oxygen atom looks much like an empty one in many images, because contrast follows atomic number and oxygen is light.

Combining non-contact , and calculations on -grown MoSe2 and CVD-grown WS2 identified the abundant chalcogen-site defect in those samples as substitutional oxygen – and found no states in the gap, contrary to what a vacancy would give. Properties attributed to vacancy levels in such samples therefore need another explanation, and the two defects have to be told apart before any of them is assigned.

Consequences and repair

A true chalcogen vacancy does leave deep levels: it traps carriers, provides non-radiative recombination that dims , scatters carriers and lowers mobility, and – usefully – makes the basal plane catalytically active for hydrogen evolution. Vacancies also bind other species, which is why they are the anchor points for oxygen and for metal atoms in .

They can be partly repaired. Treatment with a superacid, thiol chemistry or sulfur-rich annealing raises emission efficiency dramatically, and stops further damage. For any claim about vacancies, the persuasive evidence combines an imaging method sensitive to light elements, spectroscopy showing whether there are in-gap states, and a check that the beam did not create what was observed.

For specialists

A missing S, Se or Te atom – the most commonly reported point defect in TMDCs, often confused with substitutional oxygen.

Where this comes from

  1. Exploring atomic defects in molybdenum disulphide monolayers Hong et al. · Nature Communications 6, 6293 (2015) cited by 1,578
  2. Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides Barja et al. · Nature Communications 10, 3382 (2019) cited by 306