Domains and domain walls

Everyday term

In plain words

Patches of a material in which an ordered property – the direction of magnetisation, of , or the way layers are stacked – points one way, next to patches where it points another. The borders between them are domain walls. A magnet usually breaks up into domains to save the energy of its own stray field, and magnetising or switching it means growing some domains at the expense of others by moving the walls. In walls can be only a few atoms wide and carry electrical channels of their own.

As the site uses it

Switching proceeds through domain walls with soliton-like structure that need large supercells.

Theory & computation

In β′-In2Se3, ferroelectric and antiferroelectric nanostripe orders compete within one layer – a natural test for models of 2D polar domains.

In2Se3 · Indium selenide ferroelectrics

Going deeper

Three panels. Patches of order: a rectangle divided into three stripes whose magnetisation arrows point up, down and up, separated by two walls. Inside a wall: a row of arrows turning gradually from pointing up to pointing down across a bracketed region. Stacking domains: a network of triangles alternately labelled AB and BA, with their edges, the walls, highlighted. patches of order walls arrows: magnetisation regions point different ways; walls separate them domains and walls inside a wall the wall across a wall exchange spreads the turn, anisotropy squeezes it the wall’s width stacking domains AB BA twisted bilayer, below ~1° AB and BA triangles; under a field the walls carry current walls as wires
Ordered materials break into domains pointing different ways, separated by walls in which the order turns gradually – over a width set by exchange against anisotropy. In twisted bilayer graphene below about 1° the domains are AB and BA stacking triangles, and their walls carry conducting channels when a field gaps the domains.

Why order breaks into patches

A material that orders – a , a ferroelectric – could in principle point the same way everywhere. Usually it does not. A uniformly magnetised piece sends a magnetic field out into its surroundings, which costs energy; splitting into regions magnetised in different directions closes much of that field, at the price of the walls between them. A ferroelectric breaks up for the same reason, to reduce the electric field of its own polarisation. Where walls cost a lot compared with the stray field – in very small or very thin samples – a single domain can win.

Inside a wall the order does not flip at once but turns gradually from one direction to the other. Exchange, which wants neighbours aligned, spreads the turn over many atoms; , which wants every along an , squeezes it. The balance sets the width and energy of the wall, so strongly anisotropic magnets, like many layered ones, have narrow walls.

Switching by moving walls

Magnetising a magnet or switching a ferroelectric rarely flips every spin or dipole together. Domains pointing the favoured way nucleate and grow as their walls sweep across the sample; defects that pin the walls make switching harder and give a magnet its coercivity and the loop that lets it remember. In layered magnets domains can be imaged directly: a scanning magnetometer resolves them in CrI3 at a few tens of nanometres, finds magnetisations in whole multiples of a single layer’s – as if the stacking changed from patch to patch – and shows a wall written into a three-layer by cycling the field (Thiel and colleagues, 2019).

The stacking of layers can itself be the order. In parallel-stacked bilayer boron nitride the two possible stackings carry opposite out-of-plane polarisation, so stacking domains are ferroelectric domains, and the polarisation reverses with the stacking (Yasuda and colleagues, 2021).

Walls with a life of their own

A domain wall is a one-dimensional object with properties the domains lack. In bilayer graphene stacked AB on one side and BA on the other, an electric field across the bilayer opens a gap in both domains, but the wall between them keeps one-dimensional conducting states of origin; has imaged them running mainly along the two edges of the wall and surviving high magnetic fields (Yin and colleagues, 2016). graphene below about 1° reconstructs into a whole network of such walls around triangles of AB and BA stacking, and a perpendicular field turns it into a network of one-dimensional channels (Yoo and colleagues, 2019).

Walls matter elsewhere too. Domain walls in are among the places where are sought, scanning tunnelling microscopy images the walls between patches of a , and because walls are thin and can be moved, they are studied as carriers of information in their own right.

For specialists

Regions of uniform separated by walls whose width is set by the competition between exchange (or elastic) stiffness, which favours a slow rotation, and anisotropy, which favours a sharp one. Domains lower magnetostatic or depolarisation energy; coercivity and hysteresis follow from nucleation and wall motion, with pinning at defects. Scanning nitrogen-vacancy magnetometry images domains in few-layer CrI3 at tens of nanometres, with magnetisations in integer multiples of a monolayer’s. In parallel-stacked bilayer BN the stacking domains are polarisation domains. Twisted bilayer graphene below about 1° reconstructs into alternating AB and BA triangles; in a perpendicular electric field the gapped domains leave one-dimensional topological channels along the walls, imaged by scanning tunnelling microscopy at a single AB–BA wall.

Where this comes from

  1. Probing magnetism in 2D materials at the nanoscale with single-spin microscopy Thiel et al. · Science 364, 973 (2019) cited by 500
  2. Stacking-engineered ferroelectricity in bilayer boron nitride Yasuda et al. · Science 372, 1458 (2021) cited by 969
  3. Direct imaging of topological edge states at a bilayer graphene domain wall Yin et al. · Nature Communications 7, 11760 (2016)
  4. Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene Yoo et al. · Nature Materials 18, 448 (2019) cited by 734

In the news

The newest items in the site’s news feed that use the term, one from each source.

Journal Nano Letters

Twist-Induced Out-of-Plane Ferroelectricity in Bilayer Hafnia

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its compatibility and ability to retain polarization at nanometer scales. However, the polar phase responsible for ferroelectricity is metastable and requires extrinsic stabilization, complicating integration with…

Theory
Preprintnot yet peer reviewed arXiv

Magnetic proximity beyond the interface: Layer-sequence-dependent exchange in WSe2/CrI3 heterostructures

effects in (TMD)/2D-magnet heterostructures are often described in terms of the magnetization of the interfacial magnetic layer. Here, we show that this picture is sufficient to describe the neutral- splitting of the TMD, but incomplete for its …

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