The p-type partner in the 2D semiconductor family. Where MoS2 conducts electrons, WSe2 can be made to conduct holes well, which is essential for building complementary circuits like those in every modern chip. Its strong spin–orbit coupling and long-lived valley polarisation also make it a mainstay of quantum-optics research, including single-photon emitters.
They are coordination polyhedra. Only complete ones are drawn.
Three layers of 2H-WSe2, stacked like molybdenite: each layer is turned by 180° against the one below, so tungsten sits over selenium, and every second layer repeats. c = 12.96 Å. A stack with an even number of layers has an inversion centre; one with an odd number does not. Cell from Schutte, de Boer and Jellinek, Journal of Solid State Chemistry 70, 207 (1987); COD 9012193.
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Large spin–orbit coupling in both bands produces spin-dark and momentum-dark excitons that dominate low-temperature emission, so exciton–phonon coupling and phonon-assisted recombination must be modelled to explain spectra. WSe2/WS2 moiré superlattices are well described by triangular-lattice Hubbard models with tunable U/t and have become a testbed for correlated insulators and generalised Wigner crystals.
In monolayers the E′ and A′1 Raman modes nearly coincide near 250 cm−1; use the absence of the interlayer B12g mode (~308 cm−1) together with PL near 1.65 eV to confirm a monolayer. Defect density depends heavily on crystal source – flux-grown crystals usually outperform vapour-transport crystals for optics.
Essential for any complementary 2D technology, since stable p-type MoS2 does not exist. The issues are p-type contacts (high-work-function metals such as Pt or Pd, or charge-transfer doping), threshold-voltage control, and selenium precursor safety in MOCVD.
The newest items tagged WSe2, from the news feed updated 5 Oct 2026.
We theoretically investigate the optical response of the WSe2 monolayer vertically stacked on twisted bilayer graphene (tBG) under electrostatic doping. In this heterostructure, the doped moiré superlattice of tBG generates a spatially modulated electrostatic potential that couples to the electron and hole constituents…
Schottky junctions based on transition-metal dichalcogenides underpin next-generation optoelectronic devices, yet the nanoscale carrier dynamics that ultimately govern their performance remain largely inaccessible. Here, we employ optical pump-probe time-resolved atomic force microscopy (OPP-TR-AFM) to investigate the…
Spectrally isolated, electrically driven emission from localized states in two-dimensional semiconductors remains challenging in scalable planar devices. Here, we report narrow-line-width alternating-current electroluminescence (ACEL) from localized states in monolayer WSe2 using a lithographically defined sub-5 nm…
We theoretically investigate the optical response of the WSe2 monolayer vertically stacked on twisted bilayer graphene (tBG) under electrostatic doping. In this heterostructure, the doped moiré superlattice of tBG generates a spatially modulated electrostatic potential that couples to the electron and hole constituents…
In the search for topological states in bilayer graphene, capacitance measurement methods are widely utilized in bridge type readouts or source-drain reflectometry setups. In this paper we demonstrate an alternative readout method based on gate reflectometry. We probe the capacitance of a BLG flake encapsulated between…
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