Tin and germanium monochalcogenides

SnS, SnSe, GeS, GeSe

Also called SnS, SnSe, GeS, GeSe, group-IV monochalcogenides

van der Waals crystal semiconductor

Phosphorene look-alikes made from tin or germanium with sulfur or selenium. Their lopsided structure makes even single layers ferroelectric – holding a switchable electric polarisation in the plane – and bulk SnSe set records as a thermoelectric, turning heat into electricity unusually efficiently.

Crystal structure

  • Ge
  • Se
Cell
Rectangular, a = 3.84 Å (zigzag), b = 4.40 Å (armchair)
Atoms per cell
4
Ge–Se bonds
2.57 and 2.58 Å
Height
2.79 Å between the outer atom centres
A puckered layer like black phosphorus, but made of two elements: germanium and selenium alternate, each bonded to three of the other. The pucker makes the two in-plane directions very different – zigzag along one, armchair across the other – so optical, electrical and thermal properties all depend on direction. A single layer has no centre of inversion, which is why the family is studied as a candidate for in-plane ferroelectricity. One layer of bulk GeSe (Murgatroyd and colleagues, Chemistry of Materials, 2020; COD 4003515): a = 3.84 Å along the zigzag direction, b = 4.40 Å along the armchair direction, Ge–Se 2.57 Å.

Key properties

  • In-plane ferroelectricity at room temperature in monolayer SnS and SnSe, shown in 2020 after being predicted in 2016
  • Robust in-plane ferroelectricity measured in the related atomically thin SnTe, up to ~270 K for a single unit cell
  • Bulk SnSe crystals reach a thermoelectric figure of merit ZT ≈ 2.6 at 923 K along one crystal axis
  • Predicted giant in-plane piezoelectric coefficients, of order hundreds of pm/V
  • Earth-abundant, low-toxicity constituents

How it is made

  • Bridgman or vapour growth of bulk crystals – exfoliation to monolayers is difficult because interlayer bonding is strong
  • Physical vapour deposition of thin flakes and films
  • MBE on graphene for atomically thin films

Uses, and how close they are

  • Thermoelectric generators (bulk SnSe)prototype
  • 2D ferroelectric memory and piezoelectric sensorslab
  • Thin-film photovoltaics (SnS absorbers)lab

Readiness runs lab → prototype → pilot → deployed.

Open problems

  1. SnS stays ferroelectric up to about 15 layers whether the layer count is odd or even – what stacking makes that possible, and can it be controlled?
  2. Can growth deliver uniform thin films with controlled polarisation domains, given how hard exfoliation is?
  3. Does the record thermoelectric performance of SnSe survive in polycrystalline or thin-film forms?

Going deeper

Short notes for specialists. Choose a lens in the header and yours comes first.

For theoreticians · your lens

Ferroelectric double-well energetics and transition temperatures are sensitive to functional and to thermal fluctuations, so Monte Carlo or molecular dynamics on top of DFT are needed rather than static energy barriers. Strong anharmonicity explains SnSe’s low lattice thermal conductivity; the Pnma–Cmcm transition requires temperature-dependent effective potentials.

For experimentalists · your lens

Interlayer bonding is stronger than in graphite, so tape exfoliation rarely yields monolayers – vapour deposition and MBE are more productive. Detect in-plane polarisation with piezoresponse force microscopy, SHG or STM-based spectroscopy, and determine armchair and zigzag axes with polarised Raman.

For engineers · your lens

Bulk SnSe is a serious thermoelectric candidate built from abundant elements. The 2D ferroelectric and piezoelectric applications need thin-film growth with domain control before a meaningful engineering evaluation is possible.

In the research tracks

Recent news

The newest items tagged SnSe, GeSe, from the news feed updated 5 Oct 2026.

Journal Nanotechnology (IOP)

Exfoliation-induced increase in van der Waals gap in two-dimensional layered crystals

This work demonstrates that mechanical exfoliation induces measurable distortions in the van der Waals (vdW) gap of layered crystals, while the annealing process can reduce this distortion. Using x-ray diffraction, lattice parameters were compared in bulk and mechanically exfoliated flakes of selected transition metal…

All 7 items tagged SnSe, GeSe in the news feed  ·  RSS feed for SnSe, GeSe

Key references

  1. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystalsZhao et al. · Nature 508, 373 (2014)cited by 5,245doi:10.1038/nature13184
  2. Discovery of robust in-plane ferroelectricity in atomic-thick SnTeChang et al. · Science 353, 274 (2016)cited by 1,162doi:10.1126/science.aad8609
  3. Ferroelectricity and phase transitions in monolayer group-IV monochalcogenidesFei, Kang & Yang · Physical Review Letters 117, 097601 (2016)cited by 677doi:10.1103/PhysRevLett.117.097601
  4. Purely in-plane ferroelectricity in monolayer SnS at room temperatureHigashitarumizu et al. · Nature Communications 11, 2428 (2020)doi:10.1038/s41467-020-16291-9
  5. Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperatureChang et al. · Nano Letters 20, 6590 (2020)doi:10.1021/acs.nanolett.0c02357