In plain words

Every real crystal has some disorder: missing or misplaced atoms, impurities, stray charges in the , a random mixture of elements in an . Electrons moving through it scatter off these imperfections, which raises the resistance. If the disorder is strong enough, electron waves become trapped in small regions – localised – and the material stops conducting, even if it would be a metal when perfect. In a sheet one atom thick, disorder in its surroundings matters especially.

Going deeper

Three panels. A perfect lattice: identical potential wells in a row, with an electron wave running through all of them. Disorder: wells of random depth, with an electron wave confined to a small region and dying away on both sides. Puddles in graphene: a sheet patterned with blobs that are rich in electrons or in holes. a perfect lattice the electron wave runs through the same potential everywhere no scattering from a perfectly regular crystal: resistance comes from its flaws disorder: the wave is trapped interference confines it random bumps and dips localised electrons do not carry current: a would-be metal can turn insulating puddles in graphene electron-rich hole-rich charges in the substrate split the sheet into puddles; hBN smooths them out
In a perfectly regular crystal an electron wave runs through unhindered; random bumps and dips scatter it and, if strong enough, trap it by interference so that it no longer carries current. In graphene, charges in the substrate split the sheet into puddles of electrons and holes, which a clean hBN substrate smooths out.

Scattering and resistance

An electron wave travels through a perfectly periodic crystal without being scattered; it is the departures from perfection that resist it. , impurities, atoms of an alloy placed at random, rough interfaces and charged defects all scatter carriers and set the residual resistance that remains at the lowest temperatures. In a the surroundings count as much as the layer: charged impurities and roughness in a silicon dioxide substrate limit the of graphene, and in graphene they break the sheet near charge neutrality into puddles that are rich in . between flat, clean hBN layers removes much of this outside disorder.

When electrons get trapped

Philip Anderson showed in 1958 that strong enough disorder does more than scatter: waves bouncing off random obstacles interfere so that they cancel everywhere except in a small region, and the electron is localised. A material that should be a metal then insulates, conducting only by hopping between localised states with the help of heat. Scaling theory added in 1979 that in two dimensions, without , any disorder at all localises non-interacting electrons in the end.

The first sign is weak localisation: waves travelling the same loop in opposite directions interfere constructively and return to their starting point slightly more often, so the resistance rises gently on cooling and falls again in a small magnetic field, which spoils the interference. Strong spin–orbit coupling reverses the sign – weak antilocalisation – a common signature in .

Disorder as a confounder

Disorder often hides behind other explanations. It broadens lines, smears over a range of temperatures, and can make a magnet glassy. In candidate , atoms swapped between sites can produce the same broad continua of excitations as the exotic state being looked for, and in oxides and perovskites cation disorder changes gaps and lifetimes. The word is also used for atomic positions: in an order–disorder transition, such as that of the copper ions in CuInP2S6, atoms that hop between several sites at high temperature settle into one on cooling.

For specialists

Deviations from perfect periodicity – point defects, substitutional or alloy disorder, interface roughness, charged impurities and variations in the substrate – that scatter carriers and, beyond a threshold, localise their wavefunctions through interference (Anderson localisation). Scaling theory predicts that non-interacting electrons in two dimensions without spin–orbit coupling are localised by any disorder; its precursor, weak localisation, appears as a logarithmic rise of resistance at low temperature that a magnetic field suppresses, while strong spin–orbit coupling gives weak antilocalisation.

In graphene on SiO2, charged impurities break the sheet near charge neutrality into electron–hole puddles, which hBN encapsulation reduces. Strong disorder leads to hopping conduction, broadens optical lines and smears phase transitions; in frustrated magnets and correlated oxides, structural or cation disorder can mimic exotic states.

Where this comes from

  1. Absence of diffusion in certain random lattices Anderson · Physical Review 109, 1492 (1958)
  2. Scaling theory of localization: absence of quantum diffusion in two dimensions Abrahams et al. · Physical Review Letters 42, 673 (1979)
  3. Observation of electron–hole puddles in graphene using a scanning single-electron transistor Martin et al. · Nature Physics 4, 144 (2008)