Nanosheet
A general word for a very thin sheet of material, often just a few atoms thick and up to a few micrometres – thousandths of a millimetre – across. It is used especially for flakes made in large quantities in liquids.
A particle whose lateral dimensions far exceed its nanometre-scale thickness; the term is used especially for liquid-exfoliated and chemically derived dispersions, whose lateral-size and thickness distributions must be specified rather than assumed. In transistor engineering ‘nanosheet’ also denotes the stacked silicon channel sheets of gate-all-around devices.
Full explanation →
Wafer and wafer-scale growth
A wafer is the thin, round slice of ultra-pure silicon – today 300 millimetres across – on which computer chips are made, hundreds at a time. Wafer-scale growth means making a 2D material evenly over a whole wafer rather than as scattered flakes, which is what any factory needs. For the best 2D materials that is still hard: a sheet one atom thick has to have the same thickness, quality and orientation from one edge of a dinner-plate-sized disc to the other.
The substrate format of the semiconductor industry – 200 and 300 mm silicon wafers, with sapphire, SiC and glass for particular processes – and the scale at which a material must be grown, transferred and processed to enter manufacturing. Wafer-scale growth of 2D materials uses CVD and MOCVD of TMDCs, CVD of graphene and hBN, and MBE, with targets of uniform layer number, low defect and grain-boundary density and, increasingly, a single orientation on vicinal sapphire or Cu(111). The obstacles are the growth temperature against the thermal budget of a finished wafer (growth on the back end of line needs to stay below about 400 to 450 °C), the transfer from growth substrate to device wafer, and metrology that confirms thickness and quality across the wafer at production speed.
Full explanation →
Monolayer
One single layer of a layered material. Two stacked layers are a bilayer; a handful are called few-layer. Many properties change between one, two and several layers, so the exact count matters.
A single structural layer of a layered crystal – one atom thick for graphene and hBN, three atomic planes for a TMDC such as MoS2 . Band structure, screening and symmetry depend on layer number (monolayer 2H-MoS2 lacks the inversion symmetry of the bilayer), so monolayer, bilayer and few-layer samples are distinct systems.
Full explanation →
Electron hole
Usually just called a hole: the empty place an electron leaves behind in an otherwise full band. It behaves like a particle of its own with a positive charge. When a neighbouring electron steps into the gap, the gap moves the other way – like the empty space in a queue of cars, which travels backwards as each car edges forward. Many materials conduct mainly with holes, and chips need both kinds of carrier.
An unoccupied state in an otherwise filled band, usually near the valence-band maximum, treated as a quasiparticle with positive charge and a positive effective mass set by the band curvature. Holes carry the current in p-type semiconductors and give a positive Hall coefficient. In 2D semiconductors good p-type transport is harder to obtain than n-type, largely because metal contacts pin the Fermi level nearer the conduction band.
Full explanation →
Dielectric screening
The way a material weakens the pull between two charges inside it: its own electrons shift slightly and partly cancel the field between them. A sheet one atom thick has almost nothing around it to do this, so charges in it attract each other far more strongly than in a thick crystal – which is why light makes tightly bound pairs in 2D materials, and why whatever a sheet rests on changes its properties.
The reduction of the Coulomb interaction by the polarisation of bound electrons and ions and, in metals and doped layers, by free carriers, described by a dielectric function ε(q, ω). In a monolayer the field lines between distant charges run through the surroundings, so ε(q) approaches 1 as q → 0 and the screening is non-local and set by the environment. Exciton binding energies reach hundreds of meV, and a change of substrate or encapsulation shifts the quasiparticle gap by 100 meV or more while the optical gap barely moves.
Full explanation →
Exciton
An electron paired with the ‘hole’ it left behind – the empty place, which acts like a positive charge. The two attract each other and form something like a tiny atom. In very thin materials these pairs hold together unusually strongly, so they dominate how the material absorbs and emits light – even at room temperature.
A bound state of a conduction-band electron and a valence-band hole. In 2D semiconductors reduced dielectric screening raises binding energies to hundreds of meV in freestanding TMDC monolayers, so excitons dominate optical spectra at room temperature and follow a non-hydrogenic Rydberg series.
Full explanation →
Band gap
The energy an electron needs to jump from a full band, where it is stuck, into an empty one where it can move and carry current – like a car in a packed car park, which can only drive off once it is lifted to the empty deck above. Metals have no gap and always conduct; insulators have a large gap and hardly conduct; semiconductors sit in between, which is what makes them switchable.
The energy range between the valence-band maximum and the conduction-band minimum in which a crystal has no electronic states. It is direct when both extrema lie at the same crystal momentum and indirect otherwise; monolayer MoS2 is direct while bulk MoS2 is indirect. In 2D the quasiparticle and optical gaps differ strongly because excitons are tightly bound.
Full explanation →
Honeycomb lattice
A flat net of hexagons, like a beehive, with an atom at every corner. Graphene is the famous example, but the same pattern gives boron nitride its band gap, gives graphene its massless electrons, and gives some magnets interactions that cannot all be satisfied at once.
A triangular Bravais lattice with a two-site basis, so every site has three nearest neighbours on the other sublattice. Equivalent sublattices with nearest-neighbour hopping give Dirac cones at K and K′ (graphene); inequivalent ones open a gap with valley-contrasting Berry curvature (hBN, TMDC monolayers seen from above); buckling mixes in spin–orbit coupling (the Xenes); and bond-dependent exchange on the same geometry gives the exactly solvable Kitaev model behind the α-RuCl3 spin-liquid programme.
Full explanation →
Dangling bond
A bond left with nothing on the other end, on an atom at a surface that has lost the neighbour it was bonded to inside the crystal. Such bonds grab stray molecules and trap electrons, which is why ordinary surfaces are messy – and why layered crystals, whose sheets keep every bond inside themselves, split into faces that stay clean down to a single layer.
An unsaturated valence orbital at a surface, edge or defect where a covalent bond has been cut. In a bulk semiconductor such as silicon these states lie in the gap, trap charge and pin the Fermi level unless passivated by hydrogen or a grown oxide. The basal plane of a layered crystal has none, which is what allows van der Waals stacking without lattice matching and interfaces with few traps – and also why atomic layer deposition nucleates poorly on it. Edges, grain boundaries and vacancies do carry them, and are where 2D materials are chemically active.
Full explanation →
Charge carrier mobility
How easily electrons, or the gaps they leave behind (holes), move through a material when pushed by a voltage. Higher mobility means faster, more efficient electronics – but it is easily ruined by dirt, defects and a poor substrate.
Drift velocity per unit electric field, usually quoted in cm2 /V·s. In 2D materials it is limited intrinsically by phonon scattering and extrinsically by charged impurities, roughness, remote phonons and disorder; field-effect values extracted from two-terminal devices can be distorted by contact resistance.
Full explanation →
Moiré superlattice
The larger pattern that appears when two lattices are laid on top of each other slightly rotated, or with slightly different spacings – like two fine mesh curtains overlapping. Electrons feel this larger pattern, and it can reshape how they behave.
The long-wavelength interference pattern formed by two lattices with a small twist or lattice mismatch; its period sets a new, much larger unit cell for electrons.
Full explanation →
Band structure
The map of the energies an electron may have in a crystal. The allowed energies come in ranges called bands, with forbidden gaps between them – like the decks of a multi-storey car park, where a car can stand on a deck but never between two. Whether a material conducts, gives off light or lets its electrons move easily can all be read from it, and in a layered material the map changes with the number of layers.
The electron energies E(k) of a periodic crystal as functions of crystal momentum, one branch per band, usually plotted along high-symmetry lines of the Brillouin zone. Band edges, slopes and curvatures give the gap, group velocities and effective masses; crossings and inversions give the topology. In layered crystals interlayer hybridisation makes it depend on thickness: the valence-band maximum of MoS2 moves from Γ in the bulk to K in the monolayer, turning an indirect gap into a direct one.
Full explanation →
Layer transfer
Moving an atomically thin layer from where it was made to where it is needed – from the copper foil it grew on to a silicon wafer, or from a flake on tape onto another flake. The layer is too thin to pick up on its own, so it is carried on a polymer film or a soft stamp, put down, and the carrier removed. Each step risks tears, wrinkles, trapped bubbles and a film of leftover polymer, which is why transfer is often the dirtiest step in making a 2D device.
The step that moves a 2D layer from its growth substrate or exfoliation source to a target substrate or stack. Wet transfer coats the layer with a supporting polymer, usually PMMA, detaches it by etching the growth substrate or by electrochemical bubbling, and floats it onto the target before the polymer is dissolved. Dry transfer picks layers up with a viscoelastic PDMS stamp or a polymer film such as polycarbonate, often using the van der Waals adhesion of a top flake, and releases them by heating. The costs are cracks and wrinkles, trapped water, hydrocarbons and polymer residue, strain and doping, and – at wafer scale – yield that compounds with every transfer, which is why growth directly on the target and transfer-free routes are pursued.
Full explanation →
Thermal budget
How much heat, and for how long, a chip can take at a given production step before the parts already built are damaged. New materials often have to be grown or added within that limit.
The maximum temperature–time exposure a process step may impose without damaging structures already on the wafer.
Full explanation →
Phonon
A packet of vibration travelling through a crystal – the way its atoms jiggle together. Sound travelling through a solid is made of phonons. They also carry heat, slow electrons down by jostling them, and are what Raman spectroscopy measures.
A quantised collective lattice vibration. 2D materials host flexural (out-of-plane) acoustic modes with quadratic dispersion; electron–phonon scattering sets intrinsic mobility limits, and phonon frequencies measured by Raman spectroscopy report layer number, strain and doping.
Full explanation →
Strain
Stretching or squeezing a material. Because 2D materials can be stretched much further than ordinary crystals before breaking, strain can be used as a knob to change their colour, conductivity or band gap.
Relative deformation of a lattice. 2D crystals sustain elastic strains of several percent, with graphene exceeding 10 % in nanoindentation, and strain shifts band edges, Raman modes and exciton energies. Unintended strain from substrates, bubbles and transfer is a common confounder in measurements.
Full explanation →
Charge transfer
Electrons moving from one material to its neighbour simply because they are more comfortable there. It is how a layer gets doped without adding a single impurity atom to it – the charge comes from the molecule, substrate or layer next door.
Equilibration of electrochemical potential across an interface, moving electrons to whichever side has the deeper states and leaving a dipole and band bending behind. It dopes 2D layers without substitutional disorder, from adsorbed molecules and substrate surface states to the partner layer in a type-II stack, where photoexcited carriers separate in tens of femtoseconds – faster than they recombine, which is what makes such stacks useful for light harvesting and detection.
Full explanation →
Epitaxy
Growing a crystal on top of another so that its atoms line up with the ones underneath and carry on the pattern of the crystal below. It is how most semiconductor chips, lasers and LEDs are built, and it works cleanly only when the two crystals’ atomic spacings match closely – a restriction that layered 2D materials largely escape.
Growth of a crystalline film whose orientation is fixed by a single-crystal substrate: homoepitaxy on the same material, heteroepitaxy on a different one. A covalently bonded film strains to the substrate’s lattice until, beyond a critical thickness that falls steeply with mismatch, misfit dislocations relax it, so mismatches above a few percent permit only very thin coherent films. In van der Waals epitaxy the film is aligned but not bonded and mismatch is largely irrelevant; in remote epitaxy the substrate’s potential aligns the film through a graphene interlayer.
Full explanation →