In plain words

Turning a film of metal or metal oxide into a by heating it in sulfur or selenium vapour. Instead of growing the crystal atom by atom from a gas, you first lay down a thin film of, say, molybdenum or platinum – easy to do evenly over a whole – and then let sulfur or selenium react with it. The result covers large areas but is usually made of many small crystals. The same trick can swap one layer of atoms for another, which is how layers with two different faces are made.

As the site uses it

Because selenised films are polycrystalline, confirm layer number by AFM or cross-sectional TEM rather than Raman alone.

PtSe2, PdSe2, ditellurides · Platinum, palladium and nickel dichalcogenides

Convert an existing film or monolayer chemically: sulfurise or selenise deposited metal or metal-oxide films, or replace one chalcogen face of a finished monolayer to create a Janus layer.

Growth, characterisation & devices

Going deeper

Three panels. Film first, crystal second: a thin metal or oxide film on a substrate, sulfur or selenium atoms reacting with it, and below, two converted layers on the substrate. Cool enough for a chip: bars for the conversion temperature, 400 °C for PtSe₂ from platinum and 1000 °C for MoS₂ from MoO₃. Swapping one face: a MoSe₂ layer, selenium above and below molybdenum, becomes a Janus layer with sulfur on top after sulfur vapour replaces the top selenium. film first, crystal second metal or oxide film S, Se thickness set by the metal film even over a whole wafer, but in many small crystals coverage before perfection cool enough for a chip? PtSe₂ from platinum 400 °C MoS₂ from MoO₃ 1000 °C how hot the conversion runs 400 °C suits a finished chip; most others need far more temperature decides the use swapping one face S vapour MoSe₂ Janus MoSSe Se Mo S only the top face exchanged: two different faces a Janus layer
Conversion lays down the metal first, where its thickness is easy to control, and makes the 2D material afterwards in sulfur or selenium vapour – wafer-wide, but polycrystalline. Platinum converts at 400 °C, cool enough for a finished chip; most others need far more. Done gently, the same reaction swaps only one face of a monolayer, making a Janus layer.

Film first, crystal second

builds a 2D crystal from molecules arriving at a surface, and controlling how many layers form is the hard part. Conversion turns the problem around: deposit a film of metal or metal oxide whose thickness is easy to control – evaporated or sputtered evenly over a whole wafer – and then let sulfur or selenium react with it, so that the number of layers follows from how much metal was there.

Molybdenum trioxide films, reduced in hydrogen at 500 °C and sulfurised at 1000 °C, gave MoS2 layers uniform in thickness across a wafer and easy to transfer, but (Lin and colleagues, 2012). That is the usual trade: conversion gives coverage and thickness control, growth from the gas gives larger crystals.

Cool enough for a chip

Temperature decides where conversion can be used. Platinum films turn into PtSe2 at 400 °C, low enough to make the layer directly on processed silicon, and such films worked as fast and, stacked on silicon, as (Yim and colleagues, 2016). Most other dichalcogenides need far hotter conversion than a finished chip tolerates.

On a of the metal, the same reaction can produce a single crystal of the layer: selenising the (111) surface of platinum gave PtSe2 in one step, and showed it to be a , unlike bulk PtSe2 (Wang and colleagues, 2015).

Swapping one face

Conversion need not start from a metal. Heating a monolayer of MoSe2 in sulfur vapour at a carefully chosen temperature replaces the top layer of selenium with sulfur while the bottom one stays intact, leaving a Janus layer, S–Mo–Se, with two different faces (Zhang and colleagues, 2017). The reverse route strips the top sulfur of MoS2 with a hydrogen plasma and replaces it with selenium.

The products need checking. , and tell a true Janus layer from an in which both mix on both faces, and the grain boundaries of converted films limit how well they conduct.

For specialists

Conversion of a pre-deposited metal, metal-oxide or dichalcogenide film by reaction with chalcogen vapour or H2S. It separates thickness control, set by the deposited film, from crystallisation: MoO3 films reduced in hydrogen at 500 °C and sulfurised at 1000 °C give wafer-scale MoS2 that is uniform but polycrystalline; selenising platinum films at 400 °C gives PtSe2 within ; selenising a Pt(111) crystal gives single-crystal monolayer PtSe2. Controlled partial exchange replaces one chalcogen face of a monolayer, producing Janus MoSSe.

Where this comes from

  1. Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization Lin et al. · Nanoscale 4, 6637 (2012)
  2. Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt Wang et al. · Nano Letters 15, 4013 (2015) cited by 701
  3. High-performance hybrid electronic devices from layered PtSe2 films grown at low temperature Yim et al. · ACS Nano 10, 9550 (2016) cited by 381
  4. Janus monolayer transition-metal dichalcogenides Zhang et al. · ACS Nano 11, 8192 (2017) cited by 1,655

In the news

The newest items in the site’s news feed that use the term, one from each source.

Journal ACS Applied Materials & Interfaces

Chip-Scale Plasma-Sulfurized Nanocrystalline MoS2-Graphene Heterostructure-Based Optoelectronic Synaptic Transistor

Optoelectronic based on 2D (vdW) materials are very promising for next-generation, energy-efficient data processing and sensing; however, -based fabrication limits their practical application. Here, scalable inductively coupled plasma-sulfurized nanocrystalline MoS2 (nc-MoS2) and…

EngineeringGrapheneMoS₂
Preprintnot yet peer reviewed arXiv

MoSe2 and WSe2 shell morphology control via temperature optimization during two-step growth of ZnSe-based core-shell nanowires

Achieving uniform and controlled transition metal dichalcogenide (TMD) shell growth on nanowires (NWs) remains a key challenge, limiting the development of high-quality core-shell for optoelectronic and applications. In this work, the fabrication of ZnSe-MoSe2 and ZnSe-WSe2 core-shell…

ExperimentMoSe₂WSe₂

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