Tin disulfide and diselenide

SnS₂, SnSe₂

Also called SnS₂, SnSe₂

van der Waals crystal semiconductor

Tin-based layered semiconductors made from earth-abundant, low-toxicity elements. SnS2 absorbs visible light and suits photodetectors and photocatalysis; SnSe2 is naturally heavily electron-doped and is often used as the n-side of tunnel junctions with other 2D materials.

Crystal structure

  • Sn
  • S
Cell
Hexagonal, a = 3.65 Å
Atoms per cell
3
Sn–S bond
2.56 Å
Height
2.91 Å between the outer atom centres
Tin in octahedral coordination between two sulfur planes: the CdI2 structure type, as in 1T-TaS2. Unlike in the transition-metal dichalcogenides, tin has no partly filled d shell. The gap of about 2.2 eV is indirect and opens between sulfur p states and tin s states. Geometry of bulk SnS2: a = 3.65 Å, sulfur planes 1.45 Å above and below the Sn plane.

Key properties

  • Built from abundant, comparatively non-toxic elements
  • SnSe2 has a large electron affinity, giving near broken-gap band alignment with WSe2 and black phosphorus – used in 2D tunnel transistors
  • SnS2 is an n-type semiconductor with moderate mobility (tens of cm2/(V·s))
  • Can be deposited at comparatively low temperatures, including by atomic layer deposition

How it is made

  • Vapour-transport growth of bulk crystals with iodine
  • CVD from tin halides and sulfur or selenium
  • Atomic layer deposition and solution (hydrothermal) synthesis

Uses, and how close they are

  • Photodetectors and photocatalystslab
  • Tunnel field-effect transistors (SnSe2 heterojunctions)lab
  • Lithium- and sodium-ion battery anodeslab

Readiness runs lab → prototype → pilot → deployed.

Open problems

  1. Can the high native n-doping of SnSe2 be controlled?
  2. Can SnSe2-based tunnel transistors achieve steep switching reproducibly?
  3. Which polytype forms under which growth conditions, and how does it affect optical properties?

Going deeper

Short notes for specialists. Choose a lens in the header and yours comes first.

For theoreticians · your lens

Indirect gaps with the conduction band minimum at the zone boundary; PBE underestimates by the better part of an electronvolt, so use hybrids or GW. Band-alignment calculations for tunnel heterojunctions must include interface dipoles and spin–orbit coupling in the partner layer.

For experimentalists · your lens

Raman A1g near 315 cm−1 for SnS2 and near 185 cm−1 for SnSe2. Expect polytype mixtures in vapour-transport crystals and check stacking by XRD or TEM before assigning optical features.

For engineers · your lens

Attractive for abundance, low toxicity and low deposition temperature, but performance does not yet justify industrial effort outside photodetectors and energy storage.

Recent news

The newest items tagged SnS2, SnSe2, from the news feed updated 5 Oct 2026.

Journal Physical Review B

Interfacial C=C bond engineering promotes S-scheme-like charge-transfer dynamics in hBNC/SnS2 van der Waals heterojunctions

S-scheme heterojunctions offer a route to separate photogenerated carriers while retaining strong redox capability, but how interfacial chemical modification controls the underlying carrier dynamics remains insufficiently understood. Here, we systematically investigate the carrier dynamics of pristi… [Phys. Rev. B 114…

Preprintnot yet peer reviewed arXiv

Ab initio study of saddle-point excitons in monolayer SnS2

Monolayer SnS2 has emerged as a promising visible-light photocatalyst for photoelectrochemical applications, owing to its strong optical absorption in the visible range and excellent chemical stability. Despite its reduced dimensionality - where excitonic effects are expected to be pronounced - comprehensive…

All 5 items tagged SnS₂, SnSe₂ in the news feed  ·  RSS feed for SnS₂, SnSe₂

Key references

  1. High-performance top-gated monolayer SnS2 field-effect transistors and their integration in logic circuitsSong et al. · Nanoscale 5, 9666 (2013)cited by 308doi:10.1039/c3nr01899g
  2. Tuning the electronic structure of tin sulfides grown by atomic layer depositionHam et al. · ACS Applied Materials & Interfaces 5, 8889 (2013)cited by 107doi:10.1021/am401127s
  3. Tin disulfide – an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristicsHuang et al. · ACS Nano 8, 10743 (2014)cited by 550doi:10.1021/nn504481r
  4. Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection applicationSu et al. · Nano Letters 15, 506 (2015)cited by 495doi:10.1021/nl503857r
  5. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignmentYan et al. · Nano Letters 15, 5791 (2015)cited by 386doi:10.1021/acs.nanolett.5b01792