Also called InSe, GaSe, GaS, GaTe, III–VI monochalcogenides
A semiconductor whose electrons are unusually light, so they move almost freely even in flakes a few layers thick. Few-layer InSe reached room-temperature mobilities around 1,000 cm2/(V·s) and showed the quantum Hall effect – among the best of any 2D semiconductor – and has since been used for ballistic transistors. It needs protection from air.
Three layers of γ-InSe, the polytype of melt-grown crystals. Each layer is shifted by the same step in the same direction, so the pattern repeats only after three layers: c = 24.95 Å. Like 3R-MoS2, it has no inversion centre at any thickness. Cell as given by Gomes da Costa, Dandrea, Wallis and Balkanski, Physical Review B 48, 14135 (1993); COD 1534648.
Readiness runs lab → prototype → pilot → deployed.
Short notes for specialists. Choose a lens in the header and yours comes first.
In the monolayer the valence band maximum moves off Γ into a ring, producing a van Hove singularity near the band edge; predictions of magnetism and enhanced thermoelectric response are therefore sensitive to spin–orbit coupling, strain and functional. The conduction band is s/p_z-like with a light mass, which is why phonon-limited mobility calculations predict high values.
Exfoliate and encapsulate in an inert atmosphere. Confirm layer number via PL energy, which blue-shifts strongly with thinning, and Raman modes near 115, 177 and 227 cm−1. Bridgman crystals vary in stoichiometry, so check for indium-rich inclusions.
A strong channel candidate on mobility grounds, but air sensitivity and the lack of wafer-scale growth hold it back; the 2023 ballistic transistors showed how far the channel can go.
The newest items tagged InSe, GaSe, from the news feed updated 5 Oct 2026.
The realization of half-metallicity in two-dimensional materials is of considerable interest for the development of nanoscale spintronic devices. In this work, we systematically investigate the electronic structure and spin-dependent quantum transport properties of substitutionally Mo-doped GaSe mon… [Phys. Rev. B 114…
Resonance Raman spectroscopy is a powerful tool for probing electron–phonon coupling, phonon momentum distributions, and stacking-related spectral features in InSe. Based on first-principles calculations, we systematically investigate the single-resonance Raman (SRR) and double-resonance Raman (DRR)… [Phys. Rev. B 114…
Understanding defects in atomically thin van der Waals (vdW) semiconductors is essential for advancing their use in next-generation optoelectronic and photovoltaic devices. Here, we apply a combination of various impedance spectroscopy techniques to two-dimensional (2D) vdW GaSe doped with silicon (… [Phys. Rev.…
Stacking order and layer thickness exert significant influence on the physical properties of two-dimensional materials. Here, using first-principles calculations and symmetry analysis, we theoretically investigate the stacking- and layer-dependent Raman responses of InSe and infer the corresponding … [Phys. Rev. B 114…
Interlayer charge-transfer states in SnS2/InSe Van der Waals heterostructures realizing mid-infrared photodetection
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