Hexagonal boron nitride

BN

Also called h-BN, white graphene

van der Waals crystal insulator

The field’s standard substrate and encapsulant. Boron nitride looks almost exactly like graphene but is an excellent electrical insulator – atomically flat and chemically inert. Sandwiching other 2D materials between hBN layers is the single most important technique for getting clean results, and certain defects in hBN emit single particles of light at room temperature.

Crystal structure

  • B
  • N
Cell
Hexagonal, a = 2.50 Å
Atoms per cell
2
B–N bond
1.45 Å
Height
Flat: one atomic plane
The same honeycomb as graphene, but boron and nitrogen alternate, so the two sublattices are no longer equivalent. That broken symmetry, together with the difference in electronegativity, opens the wide band gap. Lattice constant 2.50 Å, the in-plane value of bulk hBN.

Key properties

  • Wide band gap of ~6 eV; out-of-plane dielectric constant of ~3–4
  • Out-of-plane breakdown field of roughly 0.7–1 V/nm in few-layer flakes
  • Atomically flat and free of dangling bonds: raises graphene mobility about tenfold compared with SiO2
  • Hyperbolic phonon polaritons in two mid-infrared bands (~760–825 and ~1,370–1,610 cm−1)
  • Room-temperature single-photon emitters, and optically addressable boron-vacancy spin defects for quantum sensing

How it is made

  • High-pressure, high-temperature growth from a barium–boron nitride solvent at Japan’s National Institute for Materials Science – the purest crystals, supplied to much of the world’s research
  • Atmospheric-pressure flux growth from Ni–Cr or Fe–Cr solvents – large, high-quality crystals, including isotopically pure h10BN and h11BN
  • CVD on Cu, Pt or Fe–Ni foils from ammonia borane or borazine – wafer-scale monolayers, more defective
  • MOCVD or MBE on sapphire – multilayer films for dielectric integration

Uses, and how close they are

  • Encapsulation layer and substrate for high-quality 2D devicesprototype
  • Single-photon sources and quantum sensorslab
  • Deep-ultraviolet emitters and 10B-enriched neutron detectorsprototype
  • Lubricants, cosmetics and high-temperature ceramics (bulk hBN)deployed

Readiness runs lab → prototype → pilot → deployed.

Open problems

  1. Can wafer-scale single-crystal hBN match the low defect density of the best bulk crystals – and be integrated as a dielectric in CMOS processes?
  2. What are the atomic structures of the room-temperature single-photon emitters, and can they be placed deterministically?
  3. Can monolayer hBN work as a reliable gate dielectric despite direct tunnelling leakage?

Going deeper

Short notes for specialists. Choose a lens in the header and yours comes first.

For theoreticians · your lens

A wide-gap, strongly excitonic insulator: GW–BSE is needed for the optical spectrum and for the indirect gap with phonon-assisted luminescence. Identifying emitter defects (carbon complexes, V_B− and others) requires hybrid-functional or embedding calculations of zero-phonon lines and Huang–Rhys factors. Its anisotropic dielectric screening is an essential input when modelling any encapsulated device.

For experimentalists · your lens

For encapsulation pick flakes 10–30 nm thick and check them for bubbles and steps by dark-field microscopy and AFM. Contrast on SiO2 is weak; the E2g Raman mode near 1,366 cm−1 grows in intensity with layer number. The crystal source matters: carbon and oxygen impurity levels vary between growers and show up as defect emission.

For engineers · your lens

The field’s dependence on a handful of crystal growers is a supply-chain risk. For industry the questions are wafer-scale growth at acceptable temperatures, dielectric reliability (leakage and breakdown statistics), and replacing hand-stacked encapsulation with deposited layers.

In the research tracks

Recent news

The newest items tagged hBN, from the news feed updated 5 Oct 2026.

Preprintnot yet peer reviewed arXiv

Quantum materials QED with van der Waals crystals

A central goal of the emerging field of materials QED is to harness subwavelength electromagnetic confinement in engineered cavities to tailor light-matter interactions. Here, we demonstrate that van der Waals multilayer cavities composed of stacked graphene and hexagonal boron nitride (hBN) provide unprecedented…

Preprintnot yet peer reviewed arXiv

Highly Efficient Functionalization of hBN with Lithium Oxalate: A Multifunctional Platform for Composites, Ion Transport, and Spin Labeling

Multifunctional solid-state materials are crucial for enabling safer and simpler lithium battery architectures. Here we report a scalable, solvent-free mechanochemical strategy to overcome the chemical inertness of hexagonal boron nitride and produce Li2(BN)6C2O4 (LBNCO), a lithium-rich boron nitride nanostructure.…

TheoryhBN
Preprintnot yet peer reviewed arXiv

Engineering photonic crystal slab modes for strong exciton-photon coupling and polariton dispersion control

We numerically study exciton-photon coupling in a hybrid structure composed of a period-doubled Si3N4 photonic crystal slab and an hBN-encapsulated MoSe2 monolayer. Period doubling folds quasi-guided modes into the light cone and produces spectrally separated photonic branches whose radiative character is controlled by…

ExperimentMoSe₂hBN

All 116 items tagged hBN in the news feed  ·  RSS feed for hBN

Key references

  1. Observations on the formation of compounds of boron and silicon with nitrogen and certain metalsBalmain · Philosophical Magazine 21, 270 (1842)cited by 28doi:10.1080/14786444208621545
  2. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystalWatanabe, Taniguchi & Kanda · Nature Materials 3, 404 (2004)cited by 3,072doi:10.1038/nmat1134
  3. Boron nitride substrates for high-quality graphene electronicsDean et al. · Nature Nanotechnology 5, 722 (2010)cited by 7,165doi:10.1038/nnano.2010.172
  4. Quantum emission from hexagonal boron nitride monolayersTran et al. · Nature Nanotechnology 11, 37 (2016)cited by 1,519doi:10.1038/nnano.2015.242